公开(公告)号：US20130068257A1

公开(公告)日：2013-03-21

申请号：US13423583

申请日：2012-03-19

Applicant: Hiroshi TOMITA ,  Minako Inukai ,  Hiaashi Okuchi ,  Linan Ji

Inventor： Hiroshi TOMITA ,  Minako Inukai ,  Hiaashi Okuchi ,  Linan Ji

IPC: B08B3/10 ,  B08B7/04 ,  B08B3/04

CPC classification number: H01L21/67005 ,  H01L21/02057 ,  H01L21/67028

Abstract: According to one embodiment, a method for cleaning a semiconductor substrate comprises supplying water vapor to a surface of a semiconductor substrate on which a concave-convex pattern is formed while heating the semiconductor substrate at a predetermined temperature, cooling the semiconductor substrate after stopping the heating and the supply of the water vapor and freezing water on the semiconductor substrate, after freezing the water, supplying pure water onto the semiconductor substrate and melting a frozen film, and after melting the frozen film, drying the semiconductor substrate.

Abstract translation: 根据一个实施例，一种用于清洁半导体衬底的方法包括：在预定温度下对半导体衬底加热的同时，在形成有凹凸图案的半导体衬底的表面上提供水蒸气，在停止加热后冷却半导体衬底 以及在半导体衬底上的水蒸气和冷冻水的供应，在冷冻水之后，将纯水供应到半导体衬底上并熔化冷冻的膜，并且在熔化冷冻膜之后干燥半导体衬底。

公开(公告)号：US20130019905A1

公开(公告)日：2013-01-24

申请号：US13420870

申请日：2012-03-15

Applicant: Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

Inventor： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC: B08B3/10 ,  F26B3/00

CPC classification number: H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Abstract translation: 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

公开(公告)号：US20100044343A1

公开(公告)日：2010-02-25

申请号：US12545541

申请日：2009-08-21

Applicant: Hiroshi Tomita ,  Linan Ji ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Hiroyasu Iimori ,  Hidekazu Hayashi

Inventor： Hiroshi Tomita ,  Linan Ji ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Hiroyasu Iimori ,  Hidekazu Hayashi

IPC: C03C15/00

CPC classification number: C03C15/00 ,  H01L21/67028 ,  H01L21/67126

Abstract: A substrate treatment apparatus for treating a substrate on which a plurality of patterns are formed adjacently, has a first chamber which has resistance to a chemical and cleans the substrate with the chemical; a second chamber which is disposed above or below the first chamber, has higher pressure resistance than the first chamber, and supercritically dries the substrate; and a gate unit which is provided between the first and second chambers and can be opened/closed.

Abstract translation: 一种用于处理其上形成有多个图案的基板的基板处理装置，具有耐化学品的第一室，并且用该化学品清洁该基板; 设置在第一室的上方或下方的第二室具有比第一室更高的耐压性，并且对基板进行超临界干燥; 以及设置在第一和第二室之间并可以打开/关闭的门单元。

公开(公告)号：US08950082B2

公开(公告)日：2015-02-10

申请号：US13600860

申请日：2012-08-31

Applicant: Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Linan Ji

Inventor： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Linan Ji

IPC: F26B5/00 ,  F26B7/00 ,  H01L21/02 ,  H01L21/67 ,  F26B5/04 ,  F26B3/00

CPC classification number: H01L21/02101 ,  F26B3/00 ,  F26B3/02 ,  F26B5/005 ,  F26B5/04 ,  F26B7/00 ,  H01L21/02057 ,  H01L21/67034

Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber.

Abstract translation: 根据一个实施例，用于半导体衬底的超临界干燥方法包括将半导体衬底（半导体衬底的被水溶性有机溶剂润湿的表面）引入室内，密封腔并增加温度 在室内，不低于水溶性有机溶剂的临界温度，从而使水溶性有机溶剂进入超临界状态，降低室内的压力并将超临界状态的水溶性有机溶剂改变为 气体，从而从室中排出水溶性有机溶剂，随着室内的压力降低到大气压，开始向室内供应惰性气体，并且在惰性气体存在于内部的状态下冷却半导体衬底 房间。

公开(公告)号：US08567420B2

公开(公告)日：2013-10-29

申请号：US12412638

申请日：2009-03-27

Applicant: Minako Inukai ,  Hiroshi Tomita ,  Kaori Umezawa ,  Yasuhito Yoshimizu ,  Linan Ji

Inventor： Minako Inukai ,  Hiroshi Tomita ,  Kaori Umezawa ,  Yasuhito Yoshimizu ,  Linan Ji

IPC: B08B3/00 ,  B08B3/12 ,  B08B6/00

CPC classification number: H01L21/02052 ,  H01L21/67051

Abstract: A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas.

Abstract translation: 一种用于半导体晶片的清洁装置包括：气体喷射装置，其包括将第一气体喷射到半导体晶片的表面上的气体喷嘴，以使半导体晶片的表面上的停滞层的厚度减薄; 以及双液体喷射装置，其包括将液滴雾喷射到半导体晶片的停滞层的厚度变薄的区域上的双流体喷嘴，所述液滴雾混合液体的二液体和第二气体。

公开(公告)号：US20130055584A1

公开(公告)日：2013-03-07

申请号：US13600860

申请日：2012-08-31

Applicant: Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Linan Ji

Inventor： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Linan Ji

IPC: F26B5/04

CPC classification number: H01L21/02101 ,  F26B3/00 ,  F26B3/02 ,  F26B5/005 ,  F26B5/04 ,  F26B7/00 ,  H01L21/02057 ,  H01L21/67034

Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber.

Abstract translation: 根据一个实施例，用于半导体衬底的超临界干燥方法包括将半导体衬底（半导体衬底的被水溶性有机溶剂润湿的表面）引入室内，密封腔并增加温度 在室内，不低于水溶性有机溶剂的临界温度，从而使水溶性有机溶剂进入超临界状态，降低室内的压力并将超临界状态的水溶性有机溶剂改变为 气体，从而从室中排出水溶性有机溶剂，随着室内的压力降低到大气压，开始向室内供应惰性气体，并且在惰性气体存在于内部的状态下冷却半导体衬底 房间。

公开(公告)号：US07838425B2

公开(公告)日：2010-11-23

申请号：US12257493

申请日：2008-10-24

Applicant: Hiroshi Tomita ,  Hiroyasu Iimori ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Linan Ji

Inventor： Hiroshi Tomita ,  Hiroyasu Iimori ,  Hisashi Okuchi ,  Tatsuhiko Koide ,  Linan Ji

IPC: H01L21/306

CPC classification number: H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

Abstract: A method of treating the surface of a semiconductor substrate has cleaning the semiconductor substrate having a pattern formed thereon by using a chemical solution, removing the chemical solution by using pure water, forming a water repellent protective film on the surface of the semiconductor substrate, rinsing the semiconductor substrate by using pure water, and drying the semiconductor substrate.

Abstract translation: 处理半导体基板的表面的方法通过使用化学溶液清洗具有形成在其上的图案的半导体基板，通过使用纯水去除化学溶液，在半导体基板的表面上形成防水保护膜，冲洗 通过使用纯水对半导体衬底进行干燥，并干燥半导体衬底。

公开(公告)号：US07749909B2

公开(公告)日：2010-07-06

申请号：US12574543

申请日：2009-10-06

Applicant: Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

Inventor： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC: H01L21/311 ,  H01L21/365

CPC classification number: H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

Abstract: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

Abstract translation: 处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面 功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

公开(公告)号：US20140250714A1

公开(公告)日：2014-09-11

申请号：US14283874

申请日：2014-05-21

Applicant: Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazayuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

Inventor： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazayuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC: H01L21/02

CPC classification number: H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

Abstract translation: 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

公开(公告)号：US20100240219A1

公开(公告)日：2010-09-23

申请号：US12801178

申请日：2010-05-26

Applicant: Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

Inventor： Hiroshi Tomita ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Kentaro Shimayama ,  Hiroyasu Iimori ,  Linan Ji

IPC: H01L21/306

CPC classification number: H01L21/02057 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/02101 ,  H01L21/3086 ,  H01L21/31133 ,  H01L21/32139 ,  Y10S134/902 ,  Y10S438/906 ,  Y10S438/964

Abstract: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.