Invention Application
- Patent Title: METHODS AND APPARATUS FOR REDUCING SPUTTERING OF A GROUNDED SHIELD IN A PROCESS CHAMBER
- Patent Title (中): 减少过程室中接地护盾溅射的方法和装置
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Application No.: US13798021Application Date: 2013-03-12
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Publication No.: US20140262764A1Publication Date: 2014-09-18
- Inventor: ALAN RITCHIE , JOHN C. FORSTER , MUHAMMAD RASHEED
- Applicant: APPLIED MATERIALS, INC.
- Main IPC: C23C14/34
- IPC: C23C14/34
Abstract:
Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.
Public/Granted literature
- US10692706B2 Methods and apparatus for reducing sputtering of a grounded shield in a process chamber Public/Granted day:2020-06-23
Information query
IPC分类:
