公开(公告)号：US20170088942A1

公开(公告)日：2017-03-30

申请号：US15378402

申请日：2016-12-14

申请人： APPLIED MATERIALS, INC.

发明人： MUHAMMAD RASHEED ,  ADOLPH MILLER ALLEN ,  JIANQI WANG

IPC分类号： C23C14/56 ,  H01J37/34 ,  C23C14/58 ,  C23C14/35 ,  C23C14/54

CPC分类号： C23C14/564 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  C23C14/5873 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3447

摘要： Embodiments of process kit shields and physical vapor deposition (PVD) chambers incorporating same are provided herein. In some embodiments, a process kit shield for use in depositing a first material in a physical vapor deposition process may include an annular body defining an opening surrounded by the body, wherein the annular body is fabricated from the first material, and an etch stop coating formed on opening-facing surfaces of the annular body, the etch stop coating is fabricated from a second material that is different from the first material, the second material having a high etch selectivity with respect to the first material.

公开(公告)号：US20140262764A1

公开(公告)日：2014-09-18

申请号：US13798021

申请日：2013-03-12

申请人： APPLIED MATERIALS, INC.

发明人： ALAN RITCHIE ,  JOHN C. FORSTER ,  MUHAMMAD RASHEED

IPC分类号： C23C14/34

摘要： Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

摘要翻译： 本文提供了用于物理气相沉积的方法和装置。 在一些实施例中，用于物理气相沉积室的工艺组件屏蔽件可以包括具有限定中心开口的一个或多个侧壁的导电体，其中主体具有一个或多个内表面的表面面积的比率 更多侧壁到一个或多个侧壁的高度为约2至约3。

公开(公告)号：US20130277203A1

公开(公告)日：2013-10-24

申请号：US13860578

申请日：2013-04-11

申请人： APPLIED MATERIALS, INC.

发明人： MUHAMMAD RASHEED ,  ADOLPH MILLER ALLEN ,  JIANQI WANG

IPC分类号： C23C14/34

CPC分类号： C23C14/564 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  C23C14/5873 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3447

摘要： Embodiments of process kit shields and physical vapor deposition (PVD) chambers incorporating same are provided herein. In some embodiments, a process kit shield for use in depositing a first material in a physical vapor deposition process may include an annular body defining an opening surrounded by the body, wherein the annular body is fabricated from the first material, and an etch stop coating formed on opening-facing surfaces of the annular body, the etch stop coating is fabricated from a second material that is different from the first material, the second material having a high etch selectivity with respect to the first material.

摘要翻译： 本文提供了加工套件屏蔽和结合相同的物理气相沉积（PVD）室的实施例。 在一些实施例中，用于在物理气相沉积工艺中沉积第一材料的工艺组件屏蔽件可以包括限定由主体包围的开口的环形体，其中环形体由第一材料制成，并且蚀刻停止涂层 形成在环形体的面向开口的表面上，蚀刻停止涂层由与第一材料不同的第二材料制成，第二材料相对于第一材料具有高蚀刻选择性。

公开(公告)号：US20140261180A1

公开(公告)日：2014-09-18

申请号：US13837742

申请日：2013-03-15

申请人： APPLIED MATERIALS, INC.

发明人： GOICHI YOSHIDOME ,  RYAN HANSON ,  DONNY YOUNG ,  MUHAMMAD RASHEED ,  KEITH A. MILLER

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  H01J37/3414 ,  H01J37/3435 ,  Y10T428/218 ,  Y10T428/219

摘要： In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; a plurality of slots disposed along an outer periphery of the backing plate extending from the first side of the backing plate toward the second side of the backing plate, wherein the plurality of slots are configured to align the target assembly with respect to the process shield.

摘要翻译： 在一些实施例中，用于具有过程屏蔽的衬底处理室中的目标组件可以包括具有第一侧和相对的第二侧的背板，其中第二侧包括具有第一直径的第一表面， 第一边 目标材料，其具有接合到所述背板的第一表面的第一侧; 其中所述第一边缘是所述背板和所述目标材料之间的界面; 沿着所述背板的第一侧面延伸到所述背板的所述第二侧面的沿着所述背板的外周设置的多个槽，其中所述多个槽被配置成相对于所述工艺防护罩对准所述目标组件。

公开(公告)号：US20190351433A1

公开(公告)日：2019-11-21

申请号：US16415665

申请日：2019-05-17

申请人： APPLIED MATERIALS, INC.

发明人： MUHANNAD MUSTAFA ,  MUHAMMAD RASHEED

IPC分类号： B05B1/18 ,  B05B7/08 ,  H01L21/67

摘要： Embodiments of multi-zone showerheads are provided herein. In some embodiments, a multi-zone showerhead includes: a body having an outer surface and including a plurality of fluidly independent plenums; and a plurality of gas distribution plugs extending through the body, wherein at least one gas distribution plug includes a first internal gas passageway coupling a first plenum of the plurality of fluidly independent plenums to the outer surface and a second internal gas passageway coupling a second plenum of the plurality of fluidly independent plenums to the outer surface. In some embodiments, the body can include: a top plate; a bottom plate; and one or more intermediate plates disposed between the top plate and the bottom plate, wherein individual plenums of the plurality of fluidly independent plenums are respectively defined between adjacent plates of the top plate, the bottom plate, and the one or more intermediate plates.

公开(公告)号：US20140261177A1

公开(公告)日：2014-09-18

申请号：US13836996

申请日：2013-03-15

申请人： APPLIED MATERIALS, INC.

发明人： MUHAMMAD RASHEED ,  KIRANKUMAR SAVANDAIAH ,  ALAN A. RITCHIE ,  ISAAC PORRAS ,  KEITH A. MILLER

IPC分类号： C23C16/04

CPC分类号： C23C14/0063 ,  C23C14/35 ,  H01J37/3244 ,  H01J37/3405

摘要： Apparatus for physical vapor deposition are provided herein. In some embodiments, a shield for use in a physical vapor deposition chamber, comprises an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, an annular groove formed in an inner wall of the one-piece body, and a plurality of gas distribution vents disposed along the annular feature and formed through the one-piece body, wherein the plurality of gas distribution vents are spaced apart from each other to distribute gases into the inner volume in a desired pattern.

摘要翻译： 本文提供用于物理气相沉积的装置。 在一些实施例中，用于物理气相沉积室的屏蔽件包括具有内部容积，顶部开口和底部开口的环形一体式主体，其中环形一体式主体的底部包括内部向上延伸的内部 U形部分，形成在一体式主体的内壁中的环形槽和沿着环形特征设置并且通过一体式形成的多个气体分配通气口，其中多个气体分配通风口间隔开 彼此分开，以期望的图案将气体分配到内部体积中。

公开(公告)号：US20140260544A1

公开(公告)日：2014-09-18

申请号：US13837064

申请日：2013-03-15

申请人： APPLIED MATERIALS, INC.

发明人： MUHAMMAD RASHEED ,  ALAN A. RITCHIE ,  ISAAC PORRAS ,  KEITH A. MILLER

IPC分类号： G01N7/00

CPC分类号： H01J37/32816 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/3405 ,  H01J37/3441

摘要： A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit.

摘要翻译： 本文提供了用于物理气相沉积的方法和装置。 在一些实施例中，用于测量基板处理室的压力的装置可以包括具有环形一体式主体的屏蔽件，该主体具有内部容积，顶部开口和底部开口，其中环形单件主体的底部包括 内部向上延伸的U形部分，围绕屏蔽的外壁布置的气体注入适配器，形成在气体注入适配器内的压力测量导管，其中压力测量导管经由形成在外部 所述屏蔽壁和衬底处理室部件设置在所述屏蔽件附近，并且其中所述间隙具有与所述内部容积基本上相同的压力，以及联接到所述压力测量导管的压力检测器。

公开(公告)号：US20140158049A1

公开(公告)日：2014-06-12

申请号：US14178146

申请日：2014-02-11

申请人： APPLIED MATERIALS, INC.

发明人： MUHAMMAD RASHEED ,  DONNY YOUNG ,  KIRANKUMAR SAVANDAIAH ,  UDAY PAI

IPC分类号： C23C16/44 ,  C23C14/34

CPC分类号： H01J37/3411 ,  C23C14/34 ,  C23C14/35 ,  C23C14/564 ,  C23C16/44 ,  H01J19/54 ,  H01J37/32495 ,  Y10T428/12528

摘要： Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

摘要翻译： 本文公开了用于处理衬底的设备。 在一些实施例中，一种装置包括具有第一端，第二端和设置在第一和第二端之间的一个或多个第一侧壁的第一屏蔽，其中第一端构造成与处理室的第一支撑构件 以将所述第一屏蔽件支撑在使得所述一个或多个第一侧壁围绕所述处理室的第一体积的位置; 以及第二屏蔽，其具有设置在所述第二屏蔽件的第一端和第二端之间并且围绕所述第一屏蔽件的第一端，第二端和一个或多个第二侧壁，其中所述第二屏蔽的第一端被配置为与 处理室的第二支撑构件以支撑第二屏蔽，使得第二屏蔽件接触第一屏蔽件以在其间形成密封。

公开(公告)号：US20180087147A1

公开(公告)日：2018-03-29

申请号：US15830924

申请日：2017-12-04

申请人： APPLIED MATERIALS, INC.

发明人： MUHAMMAD RASHEED ,  RONGJUN WANG ,  ZHENDONG LIU ,  XINYU FU ,  XIANMIN TANG

IPC分类号： C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34

摘要： Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.