公开(公告)号：US20140042023A1

公开(公告)日：2014-02-13

申请号：US13961165

申请日：2013-08-07

Applicant: APPLIED MATERIALS, INC.

Inventor： ALAN RITCHIE ,  ZHENBIN GE ,  TZA-JING GUNG ,  VIVEK GUPTA

IPC: C23C14/35

CPC classification number: C23C14/35 ,  H01J37/3266 ,  H01J37/3408 ,  H01J37/3452

Abstract: Embodiments of magnetrons suitable to provide extended target life in radio frequency (RF) plasmas are provided. In some embodiments, apparatus and methods are provided to control film uniformity whilst extending the target life in an RF plasma. In some embodiments, the present invention may facilitate one or more of very high target utilization, more uniform metal ionization, and more uniform deposition on a substrate. In some embodiments, a magnetron may include a magnet support member having a center of rotation; and a plurality of magnetic tracks, each track comprising a pair of open loop magnetic poles parallel to and spaced apart from each other, wherein one track is disposed near the center of the magnet support member, and wherein a different track is disposed in a position corresponding to an outer edge of a target material to be deposited on a substrate when installed in the PVD process chamber.

Abstract translation: 提供了适合在射频（RF）等离子体中提供延长的目标寿命的磁控管的实施例。 在一些实施例中，提供了设备和方法来控制膜均匀性，同时延长RF等离子体中的目标寿命。 在一些实施方案中，本发明可以促进在基材上非常高的目标利用，更均匀的金属电离和更均匀的沉积中的一种或多种。 在一些实施例中，磁控管可以包括具有旋转中心的磁体支撑构件; 和多个磁道，每个轨道包括彼此平行并间隔开的一对开环磁极，其中一个轨道设置在磁体支撑构件的中心附近，并且其中不同的轨道设置在一个位置 对应于当安装在PVD处理室中时要沉积在基板上的目标材料的外边缘。

公开(公告)号：US20130192980A1

公开(公告)日：2013-08-01

申请号：US13749791

申请日：2013-01-25

Applicant: APPLIED MATERIALS, INC.

Inventor： ZHENBIN GE ,  ALAN RITCHIE ,  ADOLPH MILLER ALLEN

IPC: C23C14/35

CPC classification number: C23C14/35 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/351 ,  H01J37/32706 ,  H01J37/3299 ,  H01J37/3405

Abstract: Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures.

Abstract translation: 本文提供了在基底上沉积含金属层的方法和装置。 在一些实施例中，在物理气相沉积（PVD）室中处理衬底的方法包括将VHF频率的RF功率施加到包括设置在衬底上的PVD室中的金属的靶，以形成等离子体形成 加油站; 可选地向所述目标施加DC电力以将所述等离子体引向所述目标; 使用等离子体从靶中溅射金属原子，同时保持PVD室中的第一压力足以离子化主要部分的溅射金属原子; 以及控制等离子体和衬底之间的等离子体鞘电压，以在特征结构上形成具有所需晶体结构和/或所需形态的含金属层。

公开(公告)号：US20140262764A1

公开(公告)日：2014-09-18

申请号：US13798021

申请日：2013-03-12

Applicant: APPLIED MATERIALS, INC.

Inventor： ALAN RITCHIE ,  JOHN C. FORSTER ,  MUHAMMAD RASHEED

IPC: C23C14/34

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3.

Abstract translation: 本文提供了用于物理气相沉积的方法和装置。 在一些实施例中，用于物理气相沉积室的工艺组件屏蔽件可以包括具有限定中心开口的一个或多个侧壁的导电体，其中主体具有一个或多个内表面的表面面积的比率 更多侧壁到一个或多个侧壁的高度为约2至约3。

公开(公告)号：US20140262026A1

公开(公告)日：2014-09-18

申请号：US13831285

申请日：2013-03-14

Applicant: APPLIED MATERIALS, INC.

Inventor： JOHN FORSTER ,  ZHENBIN GE ,  ALAN RITCHIE

IPC: C23F1/02 ,  B05C21/00

CPC classification number: B05C21/005 ,  C23C14/35 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32651 ,  H01J37/3408

Abstract: Variable geometry process kits for use in semiconductor process chambers have been provided herein. In some embodiments, a process kit for use in a semiconductor process chamber includes: an annular body configured to rest about a periphery of a substrate support; a first ring positioned coaxially with the annular body and supported by the annular body; a second ring positioned coaxially with the first ring and supported by the first ring; and an annular shield comprising a horizontal leg positioned coaxially with the second ring such that a portion of the horizontal leg is aligned with and below portions of the first ring and second ring.

Abstract translation: 本文提供了用于半导体处理室的可变几何工艺套件。 在一些实施例中，用于半导体处理室的处理套件包括：环形体，被配置为围绕衬底支撑件的周边放置; 第一环与环形体同轴地定位并由环形体支撑; 与所述第一环同轴并由所述第一环支撑的第二环; 以及环形护罩，其包括与所述第二环同轴地定位的水平腿，使得所述水平腿的一部分与所述第一环和所述第二环的部分对准。

公开(公告)号：US20140246314A1

公开(公告)日：2014-09-04

申请号：US14182740

申请日：2014-02-18

Applicant: APPLIED MATERIALS, INC.

Inventor： ALAN RITCHIE ,  RYAN HANSON ,  XIANWEI ZHAO

IPC: C23C14/35

CPC classification number: H01J37/3455 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3461

Abstract: Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a first base plate; a second base plate movable with respect to the first base plate between a first position and a second position; an outer magnetic pole in the shape of a loop and comprising an outer magnetic pole section coupled to the first base plate and an outer magnetic pole section coupled to the second base plate; and an inner magnetic pole disposed within the outer magnetic pole, wherein the outer and inner magnetic poles define a closed loop magnetic field, and wherein the closed loop magnetic field is maintained when the second base plate is disposed in both the first position and a second position.

Abstract translation: 本文提供了磁控管组件的方法和装置。 在一些实施例中，磁控管组件包括第一基板; 第二基板，其可相对于所述第一基板在第一位置和第二位置之间移动; 环形的外磁极，包括与第一基板耦合的外磁极部分和耦合到第二基板的外磁极部分; 以及设置在所述外磁极内的内磁极，其中所述外磁极和所述内磁极限定闭环磁场，并且其中当所述第二基板设置在所述第一位置和第二位置时，所述闭环磁场被保持 位置。