发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14213452申请日： 2014-03-14
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公开(公告)号： US20140264383A1公开(公告)日： 2014-09-18
- 发明人: Ryoichi KAJIWARA , Takuya NAKAJO , Katsuo ARAI , Yuichi YATO , Hiroi OKA , Hiroshi HOZOJI
- 申请人： RENESAS ELECTRONICS CORPORATION
- 申请人地址： JP Kanagawa
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Kanagawa
- 优先权： JP2013-053812 20130315
- 主分类号： H01L23/49
- IPC分类号： H01L23/49 ; H01L29/20 ; H01L21/50 ; H01L29/16
摘要：
A semiconductor device includes a die pad, an SiC chip mounted on the die pad, a porous first sintered Ag layer bonding the die pad and the SiC chip, and a reinforcing resin portion covering a surface of the first sintered Ag layer and formed in a fillet shape. The semiconductor device further includes a source lead electrically connected to a source electrode of the SiC chip, a gate lead electrically connected to a gate electrode, a drain lead electrically connected to a drain electrode, and a sealing body which covers the SiC chip, the first sintered Ag layer, and a part of the die pad, and the reinforcing resin portion covers a part of a side surface of the SiC chip.
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