发明申请
- 专利标题： SELF-ALIGNED BIPOLAR JUNCTION TRANSISTORS
- 专利标题（中）： 自对准双极晶体管晶体管
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申请号： US13847695申请日： 2013-03-20
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公开(公告)号： US20140284758A1公开(公告)日： 2014-09-25
- 发明人: David L. Harame , Qizhi Liu
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L29/66
摘要：
Device structures, fabrication methods, and design structures for a bipolar junction transistor. An intrinsic base is formed on the substrate, a terminal is formed on the intrinsic base, and an extrinsic base is formed that is arranged in juxtaposition with the intrinsic base on the substrate. The intrinsic base and terminal are respectively comprised of first and second semiconductor materials.
公开/授权文献
- US08927381B2 Self-aligned bipolar junction transistors 公开/授权日：2015-01-06
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