Invention Application
- Patent Title: METHOD FOR MAKING A PHOTOLITHOGRAPHY MASK INTENDED FOR THE FORMATION OF CONTACTS, MASK AND INTEGRATED CIRCUIT CORRESPONDING THERETO
- Patent Title (中): 制作用于形成联系人，掩模和集成电路的光刻胶掩模的方法
-
Application No.: US14221401Application Date: 2014-03-21
-
Publication No.: US20140291858A1Publication Date: 2014-10-02
- Inventor: Guilhem BOUTON , Patrick Regnier
- Applicant: STMICROELECTRONICS (ROUSSET) SAS
- Applicant Address: FR Rousset
- Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee: STMICROELECTRONICS (ROUSSET) SAS
- Current Assignee Address: FR Rousset
- Priority: FR1352894 20130329
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L23/522 ; H01L21/768
Abstract:
A method for making a photolithography mask for formation of electrically conducting contact pads between tracks of a metallization level and electrically active zones of integrated circuits formed on a semiconductor wafer includes forming a first mask region including first opening zones intended for the formation of the contact pads. The first opening zone has a first degree of opening that is below a threshold. A second mask region including additional opening zones is formed, with the overall degree of opening of the mask being greater than or equal to the threshold.
Public/Granted literature
Information query
IPC分类:
