公开(公告)号：US20140291858A1

公开(公告)日：2014-10-02

申请号：US14221401

申请日：2014-03-21

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Guilhem BOUTON ,  Patrick Regnier

IPC: H01L21/033 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L23/528 ,  G03F1/38 ,  G03F1/50 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L23/522 ,  H01L23/5226 ,  H01L24/09 ,  H01L2224/0603 ,  H01L2224/0812 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making a photolithography mask for formation of electrically conducting contact pads between tracks of a metallization level and electrically active zones of integrated circuits formed on a semiconductor wafer includes forming a first mask region including first opening zones intended for the formation of the contact pads. The first opening zone has a first degree of opening that is below a threshold. A second mask region including additional opening zones is formed, with the overall degree of opening of the mask being greater than or equal to the threshold.

Abstract translation: 一种制造用于在金属化层的轨道之间形成导电接触焊盘的光刻掩模的方法和形成在半导体晶片上的集成电路的电活性区域的方法包括形成第一掩模区域，其包括用于形成接触焊盘的第一开口区域 。 第一开口区具有低于阈值的第一开度。 形成包括附加开口区域的第二掩模区域，其中掩模的总体开度大于或等于阈值。

公开(公告)号：US10115666B2

公开(公告)日：2018-10-30

申请号：US14221401

申请日：2014-03-21

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Guilhem Bouton ,  Patrick Regnier

IPC: H01L21/4763 ,  H01L23/528 ,  H01L21/033 ,  H01L21/768 ,  H01L23/522 ,  H01L21/311 ,  G03F1/50 ,  H01L23/00 ,  G03F1/38

Abstract: A method for making a photolithography mask for formation of electrically conducting contact pads between tracks of a metallization level and electrically active zones of integrated circuits formed on a semiconductor wafer includes forming a first mask region including first opening zones intended for the formation of the contact pads. The first opening zone has a first degree of opening that is below a threshold. A second mask region including additional opening zones is formed, with the overall degree of opening of the mask being greater than or equal to the threshold.

公开(公告)号：US10418322B2

公开(公告)日：2019-09-17

申请号：US14956903

申请日：2015-12-02

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Guilhem Bouton ,  Patrick Regnier

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/033 ,  H01L23/522 ,  H01L21/311 ,  G03F1/50 ,  H01L23/00 ,  G03F1/38

Abstract: A method for making a photolithography mask for formation of electrically conducting contact pads between tracks of a metallization level and electrically active zones of integrated circuits formed on a semiconductor wafer includes forming a first mask region including first opening zones intended for the formation of the contact pads. The first opening zone has a first degree of opening that is below a threshold. A second mask region including additional opening zones is formed, with the overall degree of opening of the mask being greater than or equal to the threshold.