发明申请
US20140317469A1 MEMORY DEVICE FOR PERFORMING ERROR CORRECTION CODE OPERATION AND REDUNDANCY REPAIR OPERATION
有权
用于执行错误修正代码操作和冗余维修操作的存储器件
- 专利标题： MEMORY DEVICE FOR PERFORMING ERROR CORRECTION CODE OPERATION AND REDUNDANCY REPAIR OPERATION
- 专利标题（中）： 用于执行错误修正代码操作和冗余维修操作的存储器件
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申请号： US14208795申请日： 2014-03-13
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公开(公告)号： US20140317469A1公开(公告)日： 2014-10-23
- 发明人: Young-soo Sohn , Kwang-il Park , Chul-woo Park , Jong-pil Son , Jae-youn Youn , Hoi-ju Chung
- 申请人： Young-soo Sohn , Kwang-il Park , Chul-woo Park , Jong-pil Son , Jae-youn Youn , Hoi-ju Chung
- 优先权： KR10-2013-0043815 20130419
- 主分类号： G06F11/10
- IPC分类号： G06F11/10 ; G11C29/10
摘要：
Provided are a memory device and a memory module, which perform both an ECC operation and a redundancy repair operation. The memory device repairs a single-bit error due to a ‘fail’ cell by using an error correction code (ECC) operation, and also repairs the ‘fail’ cell by using a redundancy repair operation when the ‘fail’ cell is not repairable by the ECC operation. The redundancy repair operation includes a data line repair and a block repair. The ECC operation may change a codeword corresponding to data per one unit of memory cells including the ‘fail’ cell, and may also change the size of parity bits regarding the changed codeword.