摘要:
Provided are a memory device and a memory module, which perform both an ECC operation and a redundancy repair operation. The memory device repairs a single-bit error due to a ‘fail’ cell by using an error correction code (ECC) operation, and also repairs the ‘fail’ cell by using a redundancy repair operation when the ‘fail’ cell is not repairable by the ECC operation. The redundancy repair operation includes a data line repair and a block repair. The ECC operation may change a codeword corresponding to data per one unit of memory cells including the ‘fail’ cell, and may also change the size of parity bits regarding the changed codeword.
摘要:
A memory device performing an internal copy operation is provided. The memory device may receive a source address, a destination address, and page size information together with an internal copy command, compares the source address with the destination address, and performs an internal copy operation. The internal copy operation may be an internal block copy operation, an inter-bank copy operation, or an internal bank copy operation. The internal copy operation may be performed with respect to one-page data, half-page data, or quarter-page data, based on the page size information. The memory device may output as a flag signal a copy-done signal indicating that the internal copy operation has been completed.
摘要:
A memory device including: a memory cell array including normal memory cells and spare memory cells arranged in rows and columns including normal columns including the normal memory cells and at least one spare column including spare memory cells, a segment match determining circuit configured to compare a segment address with row address information corresponding to a failed segment and to generate a load control signal, and a column match determining circuit configured to compare column address information corresponding to a failed column in response to the load control signal with a column address and to generate a column address replacement control signal, wherein the memory cells connected to fail columns of the fail segment are replaced with memory cells connected to columns of the spare memory cells in response to the column address replacement control signal.
摘要:
A memory device including: a memory cell array including normal memory cells and spare memory cells arranged in rows and columns including normal columns including the normal memory cells and at least one spare column including spare memory cells, a segment match determining circuit configured to compare a segment address with row address information corresponding to a failed segment and to generate a load control signal, and a column match determining circuit configured to compare column address information corresponding to a failed column in response to the load control signal with a column address and to generate a column address replacement control signal, wherein the memory cells connected to fail columns of the fail segment are replaced with memory cells connected to columns of the spare memory cells in response to the column address replacement control signal.
摘要:
A memory device, system, and/or method are provided for performing a page state informing function. The memory device may compare one or more row addresses received along with a command, determine the page open/close state according to a page hit or miss generated as a result of comparison, count read or write commands with respect to pages corresponding to a same row address, and determine the page open/close state according to a read or write command number generated as a result of counting. The memory device may determine a page open/close state with respect to a corresponding page based on a page hit/miss and a read or write command number and output a flag signal. The memory device may provide the page open/close state for each channel. A memory controller may establish different page open/close policies for each channel.
摘要:
An integrated circuit device includes an external power supply input configured to be coupled to an external power supply and a digital circuit, such as a clock signal generator circuit, that generates noise at a power supply input thereof. The device further includes a replica load circuit and a power supply circuit coupled to the external power supply input, to a power supply input of the digital circuit and to a power supply input of the replica load circuit. The power supply circuit is configured to selectively couple the external power supply node to the power supply input of the digital circuit responsive to a voltage at the power supply input of the replica load circuit. The replica load circuit may be configured to provide a load that varies responsive to a voltage at the power supply input of the digital circuit.
摘要:
Integrated circuit memory devices include an internal command generator and a memory control circuit responsive to an internal command generated by the internal command generator. The internal command generator is configured to generate an internal command in response to a combination of an independent command and at least one dependent command received in sequence by the memory device. For example, the internal command generator may be configured to require the independent command to follow the at least one dependent command in the sequence when generating the internal command from the combination of the independent and dependent commands. Alternatively, the internal command generator may be configured to require the independent command to precede the at least one dependent command in the sequence before generating the internal command from the combination of the independent and dependent commands. These independent and dependent commands may be received by the memory device as respective multi-bit external command signals.
摘要:
A data processing device for transmitting a first data includes a data generator configured to provide the first data, a cyclic redundancy check (CRC) generator configured to generate a CRC information having at least one bit whose binary value is modified in response to a toggle information, and a data transmitter configured to combine the CRC information and the first data as a combined data and output the combined data in serial.A data processing method for transmitting a first data includes a step of generating a first data, a step of generating cyclic redundancy check (CRC) information having at least one bit whose binary value is modified in response to a toggle information, and a step of generating a combined data by combining the generated CRC information and the first data as a combined data and outputting the combined data in serial.
摘要:
A semiconductor chip package includes a substrate, a first layer disposed on the substrate and a second layer substantially similar to and disposed on the first layer. The first layer has a first input/output (I/O) circuit, a first through-via connected to the first input/output (I/O) circuit and a second through-via that is not connected to the first I/O circuit. The second layer has a second I/O circuit, a third through-via connected to the second I/O circuit and a fourth through-via that is not connected to the second I/O circuit. The first through-via is connected to the fourth through-via, and the second through-via is connected to the third through-via. The package maybe fabricated by stacking the layers, and changing the orientation of the second layer relative to the first to ensure that the first through-via is connected to the fourth through-via, and the second through-via is connected to the third through-via.
摘要:
A data processing device for transmitting a first data includes a data generator configured to provide the first data, a cyclic redundancy check (CRC) generator configured to generate a CRC information having at least one bit whose binary value is modified in response to a toggle information, and a data transmitter configured to combine the CRC information and the first data as a combined data and output the combined data in serial. A data processing method for transmitting a first data includes a step of generating a first data, a step of generating cyclic redundancy check (CRC) information having at least one bit whose binary value is modified in response to a toggle information, and a step of generating a combined data by combining the generated CRC information and the first data as a combined data and outputting the combined data in serial.