发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14268774申请日： 2014-05-02
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公开(公告)号： US20140332749A1公开(公告)日： 2014-11-13
- 发明人: Takashi Yokoyama
- 申请人： Sony Corporation
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2013-098525 20130508
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L29/78 ; H01L43/12 ; H01L43/02
摘要：
A semiconductor device includes: a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening.
公开/授权文献
- US09171887B2 Semiconductor device and method of manufacturing same 公开/授权日：2015-10-27
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