Invention Application
- Patent Title: Semiconductor Device Manufacturing Method and Substrate Treatment System
- Patent Title (中): 半导体器件制造方法和基板处理系统
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Application No.: US14504915Application Date: 2014-10-02
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Publication No.: US20150017813A1Publication Date: 2015-01-15
- Inventor: Koji AKIYAMA , Hirokazu HIGASHIJIMA , Chihiro TAMURA , Shintaro AOYAMA , Yu WAMURA
- Applicant: TOKYO ELECTRON LIMITED
- Priority: JP2012-086578 20120405
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/56 ; C23C16/46 ; C23C16/06 ; H01L21/28 ; C23C16/52
Abstract:
A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.
Public/Granted literature
- US09418837B2 Semiconductor device manufacturing method and substrate treatment system Public/Granted day:2016-08-16
Information query
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