公开(公告)号：US20180312972A1

公开(公告)日：2018-11-01

申请号：US15962463

申请日：2018-04-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji MAEKAWA ,  Takashi SAMESHIMA ,  Shintaro AOYAMA ,  Mikio SUZUKI ,  Susumu ARIMA ,  Atsushi MATSUMOTO ,  Naoki SHIBATA

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/08 ,  H01L21/285 ,  H01L21/768

Abstract: There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of inert gas and has a noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.

公开(公告)号：US20150017813A1

公开(公告)日：2015-01-15

申请号：US14504915

申请日：2014-10-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji AKIYAMA ,  Hirokazu HIGASHIJIMA ,  Chihiro TAMURA ,  Shintaro AOYAMA ,  Yu WAMURA

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/46 ,  C23C16/06 ,  H01L21/28 ,  C23C16/52

CPC classification number: H01L21/02356 ,  C23C16/06 ,  C23C16/405 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28158 ,  H01L21/28185 ,  H01L21/67109 ,  H01L21/67115 ,  H01L28/40 ,  H01L29/401 ,  H01L29/517

Abstract: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Abstract translation: 一种半导体器件制造方法，包括：在具有源极，漏极和沟道的工件上形成含有氧化铪和氧化锆的栅极绝缘膜; 并且在600℃或更低的温度下对栅极绝缘膜进行结晶热处理。 进行结晶热处理的栅极绝缘膜的相对介电常数为27以上。