公开(公告)号：US20240401199A1

公开(公告)日：2024-12-05

申请号：US18668699

申请日：2024-05-20

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Yu WAMURA ,  Kazuhide HASEBE ,  Yuichiro MOROZUMI

IPC: C23C16/455 ,  C23C16/12 ,  C23C16/44 ,  C23C16/458

Abstract: A substrate processing apparatus includes a processing chamber, a turntable rotatably provided inside the processing chamber, a plurality of placing tables rotatable with respect to the turntable and placed with a plurality of substrates, respectively, at positions separated from a rotation center of the turntable, and a plurality of nozzles disposed at positions passing centers of the plurality of placing tables as the turntable rotates. The plurality of nozzles include a processing gas discharger configured to discharge a processing gas with respect to the plurality of substrates on the plurality of placing tables that move with the rotation of the turntable, in a radial range shorter than a radius of the plurality of substrates, and a gas suction section configured to suck a gas at an outer side of the processing gas discharger.

公开(公告)号：US20150017813A1

公开(公告)日：2015-01-15

申请号：US14504915

申请日：2014-10-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji AKIYAMA ,  Hirokazu HIGASHIJIMA ,  Chihiro TAMURA ,  Shintaro AOYAMA ,  Yu WAMURA

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/46 ,  C23C16/06 ,  H01L21/28 ,  C23C16/52

CPC classification number: H01L21/02356 ,  C23C16/06 ,  C23C16/405 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28158 ,  H01L21/28185 ,  H01L21/67109 ,  H01L21/67115 ,  H01L28/40 ,  H01L29/401 ,  H01L29/517

Abstract: A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Abstract translation: 一种半导体器件制造方法，包括：在具有源极，漏极和沟道的工件上形成含有氧化铪和氧化锆的栅极绝缘膜; 并且在600℃或更低的温度下对栅极绝缘膜进行结晶热处理。 进行结晶热处理的栅极绝缘膜的相对介电常数为27以上。

公开(公告)号：US20160138158A1

公开(公告)日：2016-05-19

申请号：US14933123

申请日：2015-11-05

Applicant: Tokyo Electron Limited

Inventor： Yu WAMURA ,  Fumiaki HAYASE ,  Masahiko KAMINISHI ,  Kosuke TAKAHASHI ,  Hiroko SASAKI ,  Yu SASAKI

IPC: C23C16/455 ,  B05B1/20

CPC classification number: C23C16/45591 ,  B05B1/205 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/45587 ,  H01J37/3244

Abstract: A nozzle for supplying a fluid includes a tubular part including a tubular passage thereinside and a fluid discharge surface having a plurality of fluid discharge holes formed therein along a lengthwise direction of the tubular passage. A partition plate is provided in the tubular passage and extends along the lengthwise direction so as to partition the tubular passage into a first area including the fluid discharge surface and a second area without the fluid discharge surface. The partition plate has distribution holes whose number is less than a number of the plurality of fluid discharge holes in the lengthwise direction. A fluid introduction passage is in communication with the second area.

Abstract translation: 用于供应流体的喷嘴包括管状部件，其包括其内部的管状通道和沿管状通道的长度方向形成有多个流体排出孔的流体排出表面。 分隔板设置在管状通道中并沿着长度方向延伸，以便将管状通道分隔成包括流体排放表面的第一区域和不具有流体排放表面的第二区域。 分隔板具有数量少于多个流体排出孔在长度方向上的数量的分配孔。 流体引入通道与第二区域连通。

公开(公告)号：US20150031204A1

公开(公告)日：2015-01-29

申请号：US14337331

申请日：2014-07-22

Applicant: Tokyo Electron Limited

Inventor： Hiroko SASAKI ,  Yu WAMURA ,  Masato KOAKUTSU

IPC: H01L21/768

CPC classification number: H01L21/28556 ,  C23C16/308 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45551 ,  H01L21/76841 ,  H01L21/76856

Abstract: A method of depositing a film is provided. In the method, one operation of a unit of film deposition process is performed by carrying a substrate into a processing chamber, by depositing a nitride film on the substrate, and by carrying the substrate out of the processing chamber after finishing depositing the nitride film on the substrate. The one operation is repeated a predetermined plurality of number of times continuously to deposit the nitride film on a plurality of substrates continuously. After that, an inside of the processing chamber is oxidized by supplying an oxidation gas into the processing chamber.

Abstract translation: 提供了一种沉积薄膜的方法。 在该方法中，通过在基板上沉积氮化物膜，并且在将氮化物膜完全沉积在基板上之后将基板搬出处理室，从而将基板搬运到处理室中，进行成膜单元的一次操作 底物。 一次操作连续重复预定的次数，以将氮化物膜连续地沉积在多个基板上。 之后，通过向处理室内供给氧化气体，氧化处理室的内部。

公开(公告)号：US20140290578A1

公开(公告)日：2014-10-02

申请号：US14224205

申请日：2014-03-25

Applicant: Tokyo Electron Limited

Inventor： Yu WAMURA ,  Tomonori KUWAMOTO

IPC: C23C16/44

CPC classification number: C23C16/4401 ,  C23C16/45551 ,  C23C16/45572

Abstract: In discharging a source gas from a first process gas nozzle, rectifying members including a coolant flow passage provided in a concertinaing manner therein are arranged both sides of the first process gas nozzle. Then, a coolant at a temperature higher than a liquefaction temperature of the source gas and lower than a thermal decomposition temperature of the source gas is flown through the coolant flow passage, by which the first process gas nozzle is cooled through the rectifying member.

Abstract translation: 在从第一处理气体喷嘴排出源气体的过程中，在第一处理气体喷嘴的两侧布置有包括以其它方式设置的冷却剂流路的整流构件。 然后，在高于源气体的液化温度且低于源气体的热分解温度的温度下的冷却剂流过冷却剂流动通道，通过该冷却剂流动通道，第一处理气体喷嘴通过整流部件被冷却。

公开(公告)号：US20140094027A1

公开(公告)日：2014-04-03

申请号：US14044119

申请日：2013-10-02

Applicant: OSAKA UNIVERSITY ,  TOKYO ELECTRON LIMITED

Inventor： Shuji AZUMO ,  Yusaku KASHIWAGI ,  Yuichiro MOROZUMI ,  Yu WAMURA ,  Katsushige HARADA ,  Kosuke TAKAHASHI ,  Heiji WATANABE ,  Takayoshi SHIMURA ,  Takuji HOSOI

IPC: H01L29/40

CPC classification number: H01L29/401 ,  C23C16/303 ,  C23C16/308 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/044 ,  H01L21/049 ,  H01L21/28264 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66045 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7813

Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Abstract translation: 提供一种形成用于功率器件的MOSFET的栅极绝缘膜的方法。 在晶片W的SiC衬底上形成AlN膜，然后重复形成AlO膜并在AlO膜上形成AlN膜，从而形成具有层叠结构的AlON膜，其中AlO膜和 AlN膜交替层压。 对具有层叠结构的AlON膜进行热处理。

公开(公告)号：US20140087564A1

公开(公告)日：2014-03-27

申请号：US14031411

申请日：2013-09-19

Applicant: Tokyo Electron Limited

Inventor： Akira SHIMIZU ,  Yu WAMURA

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/45536 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32669 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111

Abstract: Provided is a plasma processing apparatus, which includes a table unit installed within a processing vessel and configured to place a substrate thereon, a purge gas supply unit configured to supply a process gas into the processing vessel, a plasma generating unit configured to turn the process gas to plasma, a magnetic field forming mechanism installed at a lateral side of the table unit and configured to form magnetic fields in a processing atmosphere in order to move electrons existing in the plasma of the process gas along a surface of the substrate; and an exhaust mechanism configured to exhaust gas from the interior of the processing vessel. The magnetic fields are opened at at-least one point in a peripheral edge portion of the substrate such that a loop of magnetic flux lines surrounding the peripheral edge portion of the substrate is not formed.

Abstract translation: 提供一种等离子体处理装置，其包括安装在处理容器内并被配置为在其上放置基板的台单元，构造成将处理气体供应到处理容器中的净化气体供应单元，等离子体生成单元， 气体到等离子体，磁场形成机构安装在工作台单元的侧面，并且被配置为在处理气氛中形成磁场，以便沿着衬底的表面移动存在于处理气体的等离子体中的电子; 以及排气机构，其构造成从处理容器的内部排出气体。 磁场在基板的周缘部的至少一点处开放，使得不形成围绕基板的周缘部的环形磁通线。

公开(公告)号：US20230230817A1

公开(公告)日：2023-07-20

申请号：US18153008

申请日：2023-01-11

Applicant: Tokyo Electron Limited

Inventor： Hitoshi KATO ,  Yu WAMURA ,  Yuichiro SASE ,  Yuji SAWADA ,  Hiroyuki KIKUCHI

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/46 ,  C23C16/503

CPC classification number: H01J37/32724 ,  H01J37/3244 ,  H01J37/3211 ,  H01J37/32733 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/503 ,  H01J2237/20214 ,  H01J2237/3323 ,  H01J2237/024

Abstract: A deposition apparatus including: a processing chamber; a rotary table provided in the processing chamber; a first processing region provided at a predetermined position in a circumferential direction of the rotary table; a second processing region provided downstream of the first processing region in the circumferential direction of the rotary table; a third processing region provided downstream of the second processing region in the circumferential direction of the rotary table; a first heater provided above the rotary table in the second processing region; and a plasma generator. The plasma generator includes: a protrusion having a longitudinally elongated shape in a planar view extending along a radius of the rotary table in a portion of an upper surface of the processing chamber, and protruding upward from the upper surface; and a coil wound along a side surface of the protrusion and has a longitudinally elongated shape in a planar view.

公开(公告)号：US20160111278A1

公开(公告)日：2016-04-21

申请号：US14876967

申请日：2015-10-07

Applicant: Tokyo Electron Limited

Inventor： Yu WAMURA ,  Fumiaki HAYASE ,  Masahiko KAMINISHI ,  Yu SASAKI ,  Kosuke TAKAHASHI

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  H01L21/687

CPC classification number: H01L21/02271 ,  C23C16/4401 ,  C23C16/455 ,  C23C16/45551 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A substrate processing method is provided. In the method, a plurality of substrates is placed on a plurality of substrate holding areas provided in a surface of a turntable at predetermined intervals in a circumferential direction, the turntable being provided in a processing chamber. Next, the turntable on which the plurality of substrates is placed is rotated. Then, a fluid is supplied to the surface of the turntable while rotating the turntable. Here, the fluid is supplied to an area between the plurality of substrate holding areas in response to an operation of changing a flow rate of the fluid.

Abstract translation: 提供了基板处理方法。 在该方法中，将多个基板沿圆周方向以预定间隔设置在转盘表面上的多个基板保持区域上，转台设置在处理室中。 接下来，旋转放置有多个基板的转台。 然后，在旋转转盘的同时，向转台的表面供给流体。 这里，响应于改变流体的流量的操作，将流体供给到多个基板保持区域之间的区域。

公开(公告)号：US20130340678A1

公开(公告)日：2013-12-26

申请号：US13925333

申请日：2013-06-24

Applicant: Tokyo Electron Limited

Inventor： Yu WAMURA ,  Yusuke TACHINO ,  Akira SHIMIZU

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C09K3/00 ,  C10L1/328 ,  C23C14/243 ,  C23C14/246 ,  C23C14/26 ,  C23C16/405 ,  C23C16/4481 ,  C23C16/4485 ,  C23C16/45525 ,  C23C16/52 ,  F16K13/10 ,  F17D1/16 ,  F17D1/17 ,  Y10T137/6416

Abstract: Provided is a gas supply apparatus which includes a raw material gas supply system for supplying a raw material gas into a processing container, a tank to store a liquid raw material, a main heating unit for heating the bottom and sides of the tank, a ceiling heating unit for heating a ceiling portion of the tank, a main temperature measurement unit for measuring a temperature of a region of the main heating unit, a ceiling temperature measurement unit for measuring a temperature of the ceiling heating unit, a liquid phase temperature measurement unit for measuring a temperature of the liquid raw material, a vapor phase temperature measurement unit for measuring a temperature of a vapor phase portion in the upper part of the tank, a level measurement unit for measuring a liquid level of the liquid raw material, and a temperature control unit for controlling the heating units.

Abstract translation: 提供一种气体供给装置，其包括用于将原料气体供给到处理容器中的原料气体供给系统，储存液体原料的罐，用于加热罐的底部和侧面的主加热单元， 用于加热罐顶部的加热单元，用于测量主加热单元的区域的温度的主温度测量单元，用于测量天花板加热单元的温度的上限温度测量单元，液相温度测量单元 用于测量液体原料的温度，用于测量罐上部气相部分的温度的气相温度测量单元，用于测量液体原料的液位的液面测量单元，以及 用于控制加热单元的温度控制单元。