- 专利标题： MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 磁性元件及其制造方法
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申请号： US14157387申请日： 2014-01-16
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公开(公告)号： US20150069543A1公开(公告)日： 2015-03-12
- 发明人: Makoto NAGAMINE , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Kazuya SAWADA , Toshihiko NAGASE
- 申请人： Makoto NAGAMINE , Youngmin EEH , Koji UEDA , Daisuke WATANABE , Kazuya SAWADA , Toshihiko NAGASE
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L43/10 ; H01L43/12
摘要：
According to one embodiment, a method of manufacturing a magnetoresistive element includes forming a first ferromagnetic layer on a base substrate, forming a tunnel barrier layer on the first ferromagnetic layer, forming a second ferromagnetic layer containing B on the tunnel barrier layer, and performing annealing in a gas-phase atmosphere including a gas, after formation of the second ferromagnetic layer, the gas producing a reaction product with B, the reaction product having a melting point lower than a treatment temperature.
公开/授权文献
- US09142756B2 Tunneling magnetoresistive element having a high MR ratio 公开/授权日：2015-09-22
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