Invention Application
US20150087157A1 ELECTROMAGNETIC DIPOLE FOR PLASMA DENSITY TUNING IN A SUBSTRATE PROCESSING CHAMBER
有权
用于基板加工室中等离子体密度调谐的电磁二极管
- Patent Title: ELECTROMAGNETIC DIPOLE FOR PLASMA DENSITY TUNING IN A SUBSTRATE PROCESSING CHAMBER
- Patent Title (中): 用于基板加工室中等离子体密度调谐的电磁二极管
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Application No.: US14491729Application Date: 2014-09-19
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Publication No.: US20150087157A1Publication Date: 2015-03-26
- Inventor: JOSEPH F. AUBUCHON , TZA-JING GUNG , SAMER BANNA
- Applicant: APPLIED MATERIALS, INC.
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/3065
Abstract:
Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and an electromagnetic dipole disposed proximate a top surface of the dielectric lid between two adjacent concentric inductive coils of the two or more concentric inductive coils.
Public/Granted literature
- US09779953B2 Electromagnetic dipole for plasma density tuning in a substrate processing chamber Public/Granted day:2017-10-03
Information query
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