Invention Application
- Patent Title: Semiconductor Devices and Methods for Fabricating the Same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14327666Application Date: 2014-07-10
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Publication No.: US20150097250A1Publication Date: 2015-04-09
- Inventor: Keon-Yong CHEON , Jun-suk CHOI , Han-Su OH , Yoshinao HARADA
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2013-0119186 20131007
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/08 ; H01L29/423 ; H01L29/78 ; H01L29/51
Abstract:
Provided is a semiconductor device, which includes a first fin on a substrate, a first gate insulating layer including a first trench disposed on the first fin, a first work function adjusting layer in the first trench, a first barrier layer covering a top surface of the first work function adjusting layer; and an interlayer insulating layer on the first barrier layer.
Information query
IPC分类:
