Invention Application
US20150137270A1 SUPERIOR INTEGRITY OF A HIGH-K GATE STACK BY FORMING A CONTROLLED UNDERCUT ON THE BASIS OF A WET CHEMISTRY
审中-公开
通过形成基于湿化学的控制基础的高K门架的优越的完整性
- Patent Title: SUPERIOR INTEGRITY OF A HIGH-K GATE STACK BY FORMING A CONTROLLED UNDERCUT ON THE BASIS OF A WET CHEMISTRY
- Patent Title (中): 通过形成基于湿化学的控制基础的高K门架的优越的完整性
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Application No.: US14570292Application Date: 2014-12-15
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Publication No.: US20150137270A1Publication Date: 2015-05-21
- Inventor: Sven Beyer , Berthold Reimer , Falk Graetsch
- Applicant: GLOBALFOUNDRIES Inc.
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Priority: DE102010042229.0 20101008
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/51 ; H01L29/49
Abstract:
A transistor device includes a gate electrode structure. The gate electrode structure includes a high-k gate insulation layer, a metal-containing first electrode material positioned above the high-k gate insulation layer, and a second electrode material positioned above the metal-containing first electrode material. The high-k gate insulation layer has a length that is less than a length of the second electrode material.
Information query
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