发明申请
- 专利标题： Extreme Ultraviolet Lithography Process and Mask
- 专利标题（中）： 极紫外光刻工艺和面膜
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申请号： US14331974申请日： 2014-07-15
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公开(公告)号： US20150138524A1公开(公告)日： 2015-05-21
- 发明人: Chih-Tsung Shih , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： G03F1/24
- IPC分类号： G03F1/24 ; G03F1/48 ; G03F1/26 ; G03F7/20
摘要：
A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes a mask having reflective phase-shift-grating-blocks (PhSGBs). The system also includes an illumination to expose the mask to produce a resultant reflected light from the mask. The resultant reflected light contains mainly diffracted lights. The system also has projection optics to collect and direct resultant reflected light to expose a target.
公开/授权文献
- US09529249B2 Extreme ultraviolet lithography process and mask 公开/授权日：2016-12-27
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