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公开(公告)号：US11740563B2
公开(公告)日：2023-08-29
申请号：US17677183
申请日：2022-02-22
发明人： Shu-Hao Chang , Norman Chen , Jeng-Horng Chen , Kuo-Chang Kau , Ming-Chin Chien , Shang-Chieh Chien , Anthony Yen , Kevin Huang
CPC分类号： G03F7/70866 , G03F7/70925
摘要： A lithography system includes a first load lock chamber configured to receive a mask, a cleaning module configured to clean the mask, a second load lock chamber configured to receive a wafer, an exposure module configured to expose the wafer to a light source through use of the cleaned mask. A direct path is provided between the first load lock chamber and the exposure module allowing the first load lock chamber to directly couple to the exposure module without through the cleaning module.
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公开(公告)号：US20220179326A1
公开(公告)日：2022-06-09
申请号：US17677183
申请日：2022-02-22
发明人： Shu-Hao Chang , Norman Chen , Jeng-Horng Chen , Kuo-Chang Kau , Ming-Chin Chien , Shang-Chieh Chien , Anthony Yen , Kevin Huang
IPC分类号： G03F7/20
摘要： A lithography system includes a first load lock chamber configured to receive a mask, a cleaning module configured to clean the mask, a second load lock chamber configured to receive a wafer, an exposure module configured to expose the wafer to a light source through use of the cleaned mask. A direct path is provided between the first load lock chamber and the exposure module allowing the first load lock chamber to directly couple to the exposure module without through the cleaning module.
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公开(公告)号：US11086227B2
公开(公告)日：2021-08-10
申请号：US16899915
申请日：2020-06-12
发明人： Yen-Cheng Lu , Chia-Hao Hsu , Shinn-Sheng Yu , Chia-Chen Chen , Jeng-Horng Chen , Anthony Yen
摘要： Various methods are disclosed herein for reducing (or eliminating) printability of mask defects during lithography processes. An exemplary method includes performing a first lithography exposing process and a second lithography exposing process using a mask to respectively image a first set of polygons oriented substantially along a first direction and a second set of polygons oriented substantially along a second direction on a target. During the first lithography exposing process, a phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the first direction and a third direction that is different than the first direction. During the second lithography exposing process, the phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the second direction and a fourth direction that is different than the third direction.
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公开(公告)号：US20200310250A1
公开(公告)日：2020-10-01
申请号：US16899915
申请日：2020-06-12
发明人： Yen-Cheng Lu , Chia-Hao Hsu , Shinn-Sheng Yu , Chia-Chen Chen , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F7/20
摘要： Various methods are disclosed herein for reducing (or eliminating) printability of mask defects during lithography processes. An exemplary method includes performing a first lithography exposing process and a second lithography exposing process using a mask to respectively image a first set of polygons oriented substantially along a first direction and a second set of polygons oriented substantially along a second direction on a target. During the first lithography exposing process, a phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the first direction and a third direction that is different than the first direction. During the second lithography exposing process, the phase distribution of light diffracted from the mask is dynamically modulated to defocus any mask defect oriented at least partially along both the second direction and a fourth direction that is different than the third direction.
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公开(公告)号：US20200050118A1
公开(公告)日：2020-02-13
申请号：US16660640
申请日：2019-10-22
发明人： Shu-Hao Chang , Norman Chen , Jeng-Horng Chen , Kuo-Chang Kau , Ming-Chin Chien , Shang-Chieh Chien , Anthony Yen , Kevin Huang
IPC分类号： G03F7/20
摘要： A lithography system includes a load lock chamber comprising an opening configured to receive a mask, an exposure module configured to expose a semiconductor wafer to a light source through use of the mask, and a cleaning module embedded inside the lithography tool, the cleaning module being configured to clean carbon particles from the mask.
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公开(公告)号：US10520806B2
公开(公告)日：2019-12-31
申请号：US16042391
申请日：2018-07-23
发明人： Chih-Tsung Shih , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
IPC分类号： G03F1/62
摘要： The present disclosure provides a method in accordance with some embodiments. A wafer is grinded from a back side. The wafer is inserted into an opening defined by a frame holder. The frame holder is attached to a carrier through a temporary layer. A front side of the wafer is attached to the temporary layer. Thereafter, the wafer is etched from the back side until the wafer reaches a predetermined thickness. Thereafter, the frame holder and the wafer therein are separated from the temporary layer and the carrier.
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公开(公告)号：US10274819B2
公开(公告)日：2019-04-30
申请号：US14615185
申请日：2015-02-05
发明人： Pei-Cheng Hsu , Chih-Tsung Shih , Jeng-Horng Chen , Chih-Cheng Lin , Hsin-Chang Lee , Shinn-Sheng Yu , Ta-Cheng Lien , Anthony Yen
摘要： A method for fabricating a pellicle for EUV lithography processes includes placing a hard mask in contact with a surface of a substrate. In some embodiments, the hard mask is configured to pattern the surface of the substrate to include a first region and a second region surrounding the first region. By way of example, while the mask in positioned in contact with the substrate, an etch process of the substrate is performed to etch the first and second regions into the substrate. Thereafter, an excess substrate region is removed so as to separate the etched first region from the excess substrate region. In various embodiments, the etched and separated first region serves as a pellicle for an extreme ultraviolet (EUV) lithography process.
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公开(公告)号：US20190113835A1
公开(公告)日：2019-04-18
申请号：US16219114
申请日：2018-12-13
发明人： Chih-Tsung Shih , Jeng-Horng Chen , Shinn-Sheng Yu , Anthony Yen
摘要： The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A multilayer (ML) structure is disposed over the substrate. The ML structure is configured to reflect radiation. The ML structure contains a plurality of interleaving film pairs. Each film pair includes a first film and a second film. The first film and the second film have different material compositions. Each film pair has a respective thickness. For at least a subset of the plurality of the film pairs, the respective thicknesses of the film pairs change randomly along a predefined direction.
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9.发明授权公开(公告)号：US09726983B2
公开(公告)日：2017-08-08
申请号：US15219024
申请日：2016-07-25
发明人： Yen-Cheng Lu , Chih-Tsung Shih , Jeng-Horng Chen , Shinn-Sheng Yu , Anthony Yen
IPC分类号： G03F7/20 , G03F1/78 , G03F7/36 , H01L21/027 , H01L21/311 , H01L21/768 , H01L21/033 , G03F7/095
CPC分类号： G03F7/70558 , G03F1/78 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/2037 , G03F7/2059 , G03F7/36 , H01J2237/31769 , H01J2237/31796 , H01L21/0274 , H01L21/0277 , H01L21/0332 , H01L21/0337 , H01L21/31144 , H01L21/76811
摘要： The present disclosure provides a method that includes forming a first patternable material layer on a substrate; forming a second patternable material layer over the first patternable material layer; and performing a charged particle beam lithography exposure process to the first patternable material layer and the second patternable material layer, thereby forming a first latent feature in the first patternable material layer.
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公开(公告)号：US09709884B2
公开(公告)日：2017-07-18
申请号：US14736669
申请日：2015-06-11
发明人： Chih-Tsung Shih , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
摘要： The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over the substrate. A capping layer is disposed over the reflective structure. An absorber layer is disposed over the capping layer. The absorber layer contains a material that has a refractive index in a range from about 0.95 to about 1.01 and an extinction coefficient greater than about 0.03.
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