Invention Application
US20150138894A1 FINDING OPTIMAL READ THRESHOLDS AND RELATED VOLTAGES FOR SOLID STATE MEMORY
审中-公开
找到最佳读取阈值和固态存储器的相关电压
- Patent Title: FINDING OPTIMAL READ THRESHOLDS AND RELATED VOLTAGES FOR SOLID STATE MEMORY
- Patent Title (中): 找到最佳读取阈值和固态存储器的相关电压
-
Application No.: US14546545Application Date: 2014-11-18
-
Publication No.: US20150138894A1Publication Date: 2015-05-21
- Inventor: Xiangyu Tang , Lingqi Zeng , Jason Bellorado , Frederick K.H. Lee , Arunkumar Subramanian
- Applicant: SK hynix memory solutions inc.
- Main IPC: G11C16/26
- IPC: G11C16/26

Abstract:
A read is performed using a first iteration of a read threshold voltage that is set to a default voltage to obtain a first characteristic. A second iteration of the read threshold voltage is generated using the default voltage and an offset. A read is performed using the second iteration of the read threshold voltage to obtain a second characteristic. A third iteration of the read threshold voltage is generated using the first and second characteristics. A read is performed using the third iteration of the read threshold voltage to obtain a third characteristic. It is determined if the third characteristic is one of the two characteristics closest to a stored characteristic. If so, a fourth iteration of the read threshold voltage is generated using the two closest characteristics.
Public/Granted literature
- US09305658B2 Finding optimal read thresholds and related voltages for solid state memory Public/Granted day:2016-04-05
Information query