Invention Application
US20150138894A1 FINDING OPTIMAL READ THRESHOLDS AND RELATED VOLTAGES FOR SOLID STATE MEMORY 审中-公开
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FINDING OPTIMAL READ THRESHOLDS AND RELATED VOLTAGES FOR SOLID STATE MEMORY
Abstract:
A read is performed using a first iteration of a read threshold voltage that is set to a default voltage to obtain a first characteristic. A second iteration of the read threshold voltage is generated using the default voltage and an offset. A read is performed using the second iteration of the read threshold voltage to obtain a second characteristic. A third iteration of the read threshold voltage is generated using the first and second characteristics. A read is performed using the third iteration of the read threshold voltage to obtain a third characteristic. It is determined if the third characteristic is one of the two characteristics closest to a stored characteristic. If so, a fourth iteration of the read threshold voltage is generated using the two closest characteristics.
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