Invention Application
US20150187582A1 DOPING METHOD, DOPING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
有权
掺杂方法，掺杂装置和制造半导体器件的方法
- Patent Title: DOPING METHOD, DOPING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Patent Title (中): 掺杂方法，掺杂装置和制造半导体器件的方法
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Application No.: US14582417Application Date: 2014-12-24
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Publication No.: US20150187582A1Publication Date: 2015-07-02
- Inventor: Hirokazu UEDA , Masahiro OKA , Yasuhiro SUGIMOTO , Masahiro HORIGOME , Yuuki KOBAYASHI
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2013-273266 20131227
- Main IPC: H01L21/223
- IPC: H01L21/223 ; H01J37/317 ; H01L21/324
Abstract:
Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. The plasma doping method also includes an annealing processing which is performed on the processing target substrate which has been subjected to the plasma doping processing.
Public/Granted literature
- US09472404B2 Doping method, doping apparatus and method of manufacturing semiconductor device Public/Granted day:2016-10-18
Information query
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