公开(公告)号：US20220316065A1

公开(公告)日：2022-10-06

申请号：US17636808

申请日：2020-08-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Ryota IFUKU ,  Hirokazu UEDA

IPC: C23C16/511 ,  H01J37/32 ,  C23C16/27 ,  C23C16/455

Abstract: There is provided a processing apparatus for forming a film with a plasma. The processing apparatus comprises: a processing container, having a ceramic sprayed coating on an inner wall on which an antenna that radiates microwaves is arranged, configured to accommodate a substrate; a mounting table configured to mount the substrate in the processing container; and a controller configured to perform a precoating process of coating a surface of the ceramic sprayed coating with a first carbon film with a plasma of a first carbon-containing gas at a first pressure and a film forming process of forming a second carbon film on the substrate with a plasma of a second carbon-containing gas at a second pressure.

公开(公告)号：US20180350598A1

公开(公告)日：2018-12-06

申请号：US15997431

申请日：2018-06-04

Applicant: Tokyo Electron Limited

Inventor： Yoshimasa WATANABE ,  Masahiro OKA ,  Hirokazu UEDA

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3205 ,  C23C16/28 ,  C23C16/50 ,  C23C16/56

Abstract: In a method for removing a boron film formed on a substrate by CVD, heat treatment is performed on a part or all boron film in an oxidizing atmosphere and oxidizing a heat-treated portion. Then, an oxidized portion of the boron film is removed by water or aqueous solution containing electrolyte ions.

公开(公告)号：US20250067664A1

公开(公告)日：2025-02-27

申请号：US18726285

申请日：2022-12-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masafumi ASANO ,  Takanobu KAITSUKA ,  Yuji OTSUKI ,  Yasutoshi UMEHARA

IPC: G01N21/3563 ,  B23K26/364 ,  C23C16/02 ,  C23C16/04 ,  C23C16/52 ,  G01N21/95

Abstract: There is provided a determination method comprising: a post-embedding measurement step for performing spectroscopic measurement on a substrate in which a pattern including a recess is formed, the recess having an embedding material embedded therein, and measuring an absorbance spectrum of the substrate having the embedding material embedded therein; and a determination step for determining an embedded state of the recess based on an integrated value of an intensity of the measured absorbance spectrum of the substrate at a plurality of wavenumbers.

公开(公告)号：US20230111710A1

公开(公告)日：2023-04-13

申请号：US17960746

申请日：2022-10-05

Applicant: Tokyo Electron Limited

Inventor： Takeya INOUE ,  Kenji SEKIGUCHI ,  Mitsuaki IWASHITA ,  Hirokazu UEDA ,  Koji AKIYAMA ,  Ryuichi ASAKO

IPC: B01D11/04 ,  B01D17/02 ,  B08B3/08 ,  C07C29/86

Abstract: A purification processing apparatus for supplying purified isopropyl alcohol to a substrate processing apparatus. The purification processing apparatus includes: a processing chamber in which unpurified isopropyl alcohol and ionic liquid are mixed, and the isopropyl alcohol and the ionic liquid are separated to purify the isopropyl alcohol; an unpurified solvent supply port configured to supply the unpurified isopropyl alcohol to the processing chamber; an ionic liquid supply port configured to supply the ionic liquid to the processing chamber; and a purified solvent outlet configured to supply the purified isopropyl alcohol from the processing chamber to the substrate processing apparatus.

公开(公告)号：US20230042099A1

公开(公告)日：2023-02-09

申请号：US17757906

申请日：2020-11-26

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Nobutake KABUKI ,  Ryota IFUKU ,  Masahito SUGIURA ,  Hirokazu UEDA

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/768 ,  H01L21/285 ,  C23C16/26 ,  C23C16/511 ,  C01B32/186

Abstract: A film forming method of forming a carbon film includes: cleaning an interior of a processing container by using oxygen-containing plasma in a state in which no substrate is present inside the processing container; subsequently, extracting and removing oxygen inside the processing container by using plasma in the state in which no substrate is present inside the processing container; and subsequently, loading a substrate into the processing container and forming the carbon film on the substrate through plasma CVD using a processing gas including a carbon-containing gas, wherein the cleaning, the extracting and removing the oxygen, and the forming the carbon film are repeatedly performed.

公开(公告)号：US20190237326A1

公开(公告)日：2019-08-01

申请号：US16257790

申请日：2019-01-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KOMIYA ,  Hirokazu UEDA ,  Atsushi ENDO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

CPC classification number: H01L21/02274 ,  H01J37/32201 ,  H01L21/02112 ,  H01L21/31122 ,  H01L21/67069 ,  H01L21/68714

Abstract: There is provided a selective film forming method, comprising a first step of preparing a work piece having a plurality of recesses; a second step of forming a boron-based film having a first predetermined film thickness in a portion of the work piece other than the recesses by plasma CVD; and a third step of etching a side surface of the formed boron-based film having the first predetermined film thickness, wherein the boron-based film is formed in the portion of the work piece other than the recesses in a self-aligned and selective manner.

公开(公告)号：US20180174838A1

公开(公告)日：2018-06-21

申请号：US15833685

申请日：2017-12-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Hiraku ISHIKAWA ,  Yoshimasa WATANABE ,  Syuhei YONEZAWA

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/511 ,  C23C16/38 ,  C23C16/46 ,  C23C16/44

CPC classification number: H01L21/0332 ,  C23C16/38 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32449 ,  H01J2237/182 ,  H01J2237/3321 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/11551 ,  H01L27/11578

Abstract: There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).

公开(公告)号：US20180012763A1

公开(公告)日：2018-01-11

申请号：US15539224

申请日：2015-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Yuuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01J37/32 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32403 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/335 ,  H01J2237/3365 ,  H01L21/02057 ,  H01L29/66803

Abstract: Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a plasma doping, and plasma is generated within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate hold on a holding pedestal in the processing vessel.

公开(公告)号：US20140367699A1

公开(公告)日：2014-12-18

申请号：US14474835

申请日：2014-09-02

Applicant: TOHOKU UNIVERSITY ,  FUJI ELECTRIC CO., LTD. ,  TOKYO ELECTRON LIMITED

Inventor： Akinobu TERAMOTO ,  Hiroshi KAMBAYASHI ,  Hirokazu UEDA ,  Yuichiro MOROZUMI ,  Katsushige HARADA ,  Kazuhide HASEBE ,  Tadahiro OHMI

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L21/28 ,  H01L23/00 ,  H01L29/51 ,  H01L29/778

CPC classification number: H01L21/02274 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0254 ,  H01L21/28264 ,  H01L23/564 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42364 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.

Abstract translation: 制造半导体器件的方法是制造包括构成半导体层的GaN（氮化镓）的半导体器件，并且包括形成栅极绝缘膜的步骤。 在该步骤中，通过使用微波等离子体在包含GaN的氮化物层上形成选自由SiO 2膜和Al 2 O 3膜构成的组中的至少一种膜，并且所形成的膜用作栅极绝缘膜的至少一部分。

公开(公告)号：US20230230855A1

公开(公告)日：2023-07-20

申请号：US18096144

申请日：2023-01-12

Applicant: Tokyo Electron Limited

Inventor： Takeo NAKANO ,  Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Ryuichi ASAKO ,  Naoki UMESHITA

IPC: H01L21/56 ,  H01L21/67

CPC classification number: H01L21/56 ,  H01L21/67126

Abstract: A substrate processing method includes: preparing a substrate having a metal film exposed on a surface of the substrate; and forming a film of an ionic self-association material on a surface of the metal film by supplying the ionic self-association material to the surface of the substrate, the ionic self-association material having fluidity with a hydrophilic group and a hydrophobic group.