公开(公告)号：US20180012763A1

公开(公告)日：2018-01-11

申请号：US15539224

申请日：2015-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Yuuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01J37/32 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32403 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/335 ,  H01J2237/3365 ,  H01L21/02057 ,  H01L29/66803

Abstract: Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a plasma doping, and plasma is generated within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate hold on a holding pedestal in the processing vessel.

公开(公告)号：US20140302666A1

公开(公告)日：2014-10-09

申请号：US14244481

申请日：2014-04-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Peter VENTZEK ,  Takenao NEMOTO ,  Hirokazu UEDA ,  Yuuki KOBAYASHI ,  Masahiro HORIGOME

IPC: H01L21/223 ,  H01J37/32

CPC classification number: H01L21/2236 ,  H01J37/32412 ,  H01J37/3244 ,  H01J37/32449 ,  H01L29/66803

Abstract: A method and apparatus for doping a surface of a substrate with a dopant, with the dopant being for example phosphine or arsine. The doping is performed with a plasma formed primarily of an inert gas such as helium or argon, with a low concentration of the dopant. To provide conformal doping, preferably to form a monolayer of the dopant, the gas flow introduction location is switched during the doping process, with the gas mixture primarily introduced through a center top port in the process chamber during a first period of time followed by introduction of the gas mixture primarily through peripheral or edge injection ports for a second period of time, with the switching continuing in an alternating fashion as the plasma process.

Abstract translation: 一种用掺杂剂掺杂衬底表面的方法和装置，掺杂剂例如是膦或胂。 用主要由诸如氦或氩的惰性气体形成的等离子体进行掺杂，掺杂剂浓度低。 为了提供适形掺杂，优选地形成掺杂剂的单层，在掺杂过程期间切换气流引入位置，其中气体混合物主要通过处理室中的中心顶端口在第一时间段内引入，随后引入 的气体混合物主要通过外围或边缘注入端口持续第二时间段，其中切换以等离子体处理交替的方式继续。

公开(公告)号：US20140179028A1

公开(公告)日：2014-06-26

申请号：US14136388

申请日：2013-12-20

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Masahiro HORIGOME ,  Yuuki KOBAYASHI

IPC: H01L21/66 ,  C23C16/511

CPC classification number: H01J37/32192 ,  H01J21/22 ,  H01J37/3222 ,  H01J37/32449 ,  H01J37/32972 ,  H01J37/3299 ,  H01L21/22

Abstract: Disclosed is a plasma doping apparatus provided with a plasma generating mechanism. The plasma generating mechanism includes a microwave generator that generates microwave for plasma excitation, a dielectric window that transmits the microwave generated by the microwave generator into a processing container, and a radial line slot antenna formed with a plurality of slots. The radial line slot antenna radiates the microwave to the dielectric window. A control unit controls the plasma doping apparatus such that a doping gas and a gas for plasma excitation are supplied into the processing container by a gas supply unit in a state where the substrate is placed on a holding unit, and then plasma is generated by the plasma generating mechanism to perform doping on the substrate such that the concentration of the dopant implanted into the substrate is less than 1×1013 atoms/cm2.

Abstract translation: 公开了一种具有等离子体产生机构的等离子体掺杂装置。 等离子体产生机构包括产生用于等离子体激发的微波的微波发生器，将由微波发生器产生的微波传输到处理容器中的电介质窗和形成有多个槽的径向线缝隙天线。 径向线槽天线将微波辐射到电介质窗口。 控制单元控制等离子体掺杂装置，使得在将基板放置在保持单元上的状态下，通过气体供给单元将用于等离子体激发的掺杂气体和气体供应到处理容器中，然后通过 等离子体产生机构，以在衬底上进行掺杂，使得注入到衬底中的掺杂剂的浓度小于1×1013原子/ cm 2。

公开(公告)号：US20140094024A1

公开(公告)日：2014-04-03

申请号：US14039761

申请日：2013-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro OKA ,  Yuuki KOBAYASHI ,  Hirokazu UEDA ,  Masahiro HORIGOME

IPC: H01L21/22 ,  H01L21/67

CPC classification number: H01L21/22 ,  H01L21/2236 ,  H01L21/67011 ,  H01L21/67109 ,  H01L21/6831 ,  H01L29/66803

Abstract: Disclosed is a plasma doping apparatus including a processing chamber, a substrate holding unit, a plasma generating mechanism, a pressure control mechanism, a bias power supply mechanism, and a control unit. The control unit controls the pressure within the processing chamber to be a first pressure and controls the bias power to be supplied to the holding unit is to be a first bias power for a first plasma process. The control unit also controls the pressure within the processing chamber to be a second pressure which is higher than the first pressure, and controls the bias power to be supplied to the holding unit to be a second bias power which is lower than the first bias power for a second plasma process.

Abstract translation: 公开了一种等离子体掺杂装置，其包括处理室，基板保持单元，等离子体产生机构，压力控制机构，偏置供电机构和控制单元。 控制单元将处理室内的压力控制为第一压力，并且控制向保持单元供应的偏置功率为第一等离子体处理的第一偏置功率。 控制单元还将处理室内的压力控制为高于第一压力的第二压力，并且将提供给保持单元的偏置功率控制为低于第一偏置功率的第二偏置功率 用于第二等离子体工艺。

公开(公告)号：US20160189963A1

公开(公告)日：2016-06-30

申请号：US14976456

申请日：2015-12-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Yuuki KOBAYASHI ,  Yasuhiro SUGIMOTO

IPC: H01L21/223 ,  H01L21/225

CPC classification number: H01L21/2236 ,  H01L21/2256 ,  H01L29/66803

Abstract: Disclosed is a method of performing doping by implanting a dopant to a processing target substrate. First, in an oxide film forming step, an oxide film is formed on the processing target substrate prior to performing a doping treatment. In addition, after the oxide film is formed on the processing target substrate, a plasma doping treatment is performed from a top of the oxide film after the oxide film forming step.

Abstract translation: 公开了通过将掺杂剂注入到处理目标衬底来进行掺杂的方法。 首先，在氧化膜形成工序中，在进行掺杂处理之前，在处理对象基板上形成氧化膜。 另外，在处理对象基板上形成氧化膜之后，在氧化膜形成工序之后，从氧化膜的顶部进行等离子体掺杂处理。

公开(公告)号：US20150318220A1

公开(公告)日：2015-11-05

申请号：US14700851

申请日：2015-04-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuuki KOBAYASHI ,  Hirokazu UEDA ,  Kohei YAMASHITA ,  Peter L.G. VENTZEK

IPC: H01L21/66 ,  H01L21/265 ,  H01J37/317 ,  G01J3/443 ,  H01L21/67

CPC classification number: G01J3/443 ,  H01J37/3171 ,  H01J37/32192 ,  H01J37/32412 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/2236 ,  H01L21/265 ,  H01L21/67 ,  H01L21/67253 ,  H01L22/10

Abstract: There is provided a plasma processing apparatus, which includes: a processing chamber into which a target substrate is loaded and in which a dopant is implanted into the target substrate using a plasma of a gas which contains an element used as the dopant; a wall probe configured to measure a change in voltage corresponding to a density of charged particles in the plasma generated within the processing chamber; an OES (Optical Emission Spectrometer) configured to measure a light emission intensity of the dopant existing in the plasma; and a calculation unit configured to calculate a dose amount of the dopant implanted into the target substrate, based on a measurement result obtained at the wall probe and a measurement result obtained at the OES.

Abstract translation: 提供了一种等离子体处理装置，其包括：处理室，其中装载目标基板并使用包含用作掺杂剂的元素的气体的等离子体将掺杂剂注入其中; 壁探针，被配置为测量对应于在所述处理室内产生的等离子体中的带电粒子的密度的电压变化; 被配置为测量存在于等离子体中的掺杂剂的发光强度的OES（发射光谱仪）; 以及计算单元，被配置为基于在所述壁探针获得的测量结果和在所述OES获得的测量结果来计算注入到所述目标衬底中的掺杂剂的剂量。

公开(公告)号：US20150187582A1

公开(公告)日：2015-07-02

申请号：US14582417

申请日：2014-12-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Masahiro OKA ,  Yasuhiro SUGIMOTO ,  Masahiro HORIGOME ,  Yuuki KOBAYASHI

IPC: H01L21/223 ,  H01J37/317 ,  H01L21/324

CPC classification number: H01L21/2236 ,  H01J37/32192 ,  H01J37/32412 ,  H01L29/66803

Abstract: Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. The plasma doping method also includes an annealing processing which is performed on the processing target substrate which has been subjected to the plasma doping processing.

Abstract translation: 公开了一种等离子体掺杂装置和等离子体掺杂方法，用于通过将掺杂剂离子注入到处理目标衬底中来对处理目标衬底进行掺杂。 等离子体掺杂方法包括通过使用微波产生等离子体在保持在处理容器内的保持单元上的处理目标衬底上进行等离子体掺杂处理。 等离子体掺杂方法还包括对经过等离子体掺杂处理的处理对象基板进行的退火处理。