Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a variable resistance layer that are interconnected in series by, for example, stacking the two. The embedded resistor prevents excessive electrical currents through the variable resistance layer thereby preventing its over-programming. The embedded resistor is configured to maintain a constant resistance during the operation of the ReRAM cell, such as applying switching currents and changing the resistance of the variable resistance layer. Specifically, the embedded resistor may be electrically broken down during fabrication of the ReRAM cell to improve the subsequent stability of the embedded resistance to electrical fields during operation of the ReRAM cell. The embedded resistor may be made from materials that allow this initial breakdown and to avoid future breakdowns, such metal silicon nitrides, metal aluminum nitrides, and metal boron nitrides.