公开(公告)号：US20160020392A1

公开(公告)日：2016-01-21

申请号：US14336652

申请日：2014-07-21

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Yun Wang ,  Federico Nardi ,  Milind Weling

IPC: H01L45/00

CPC classification number: H01L45/145 ,  H01L27/24 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/1608 ,  H01L45/1625 ,  H01L45/1641

Abstract: A resistive-switching memory (ReRAM cell) has a current-limiting electrode layer that combines the functions of an embedded resistor, an outer electrode, and an intermediate electrode, reducing the thickness of the ReRAM stack and simplifying the fabrication process. The materials include compound nitrides of a transition metal and one of aluminum, boron, or silicon. In experiments with tantalum silicon nitride, peak yield in the desired resistivity range corresponded to ˜24 at % silicon and ˜32 at % nitrogen, believed to optimize the trade-off between inhibiting TaSi2 formation and minimizing nitrogen diffusion. A binary metal nitride may be formed at one or more of the interfaces between the current-limiting electrode and neighboring layers such as metal-oxide switching layers.

Abstract translation: 电阻式开关存储器（ReRAM单元）具有限流电极层，其结合了嵌入式电阻器，外部电极和中间电极的功能，减小了ReRAM堆叠的厚度并简化了制造工艺。 这些材料包括过渡金属和铝，硼或硅之一的化合物氮化物。 在使用钽氮化硅的实验中，所需电阻率范围内的峰值产率对应于〜24at％的硅和〜32at％的氮，据信可以优化抑制TaSi2形成和最小化氮扩散之间的折衷。 二元金属氮化物可以形成在限流电极和相邻层之间的界面中的一个或多个处，例如金属氧化物开关层。

公开(公告)号：US09224951B1

公开(公告)日：2015-12-29

申请号：US14336652

申请日：2014-07-21

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Yun Wang ,  Federico Nardi ,  Milind Weling

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/145 ,  H01L27/24 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/1608 ,  H01L45/1625 ,  H01L45/1641

Abstract: A resistive-switching memory (ReRAM cell) has a current-limiting electrode layer that combines the functions of an embedded resistor, an outer electrode, and an intermediate electrode, reducing the thickness of the ReRAM stack and simplifying the fabrication process. The materials include compound nitrides of a transition metal and one of aluminum, boron, or silicon. In experiments with tantalum silicon nitride, peak yield in the desired resistivity range corresponded to ˜24 at % silicon and ˜32 at % nitrogen, believed to optimize the trade-off between inhibiting TaSi2 formation and minimizing nitrogen diffusion. A binary metal nitride may be formed at one or more of the interfaces between the current-limiting electrode and neighboring layers such as metal-oxide switching layers.

Abstract translation: 电阻式开关存储器（ReRAM单元）具有限流电极层，其结合了嵌入式电阻器，外部电极和中间电极的功能，减小了ReRAM堆叠的厚度并简化了制造工艺。 这些材料包括过渡金属和铝，硼或硅之一的化合物氮化物。 在使用钽氮化硅的实验中，所需电阻率范围内的峰值产率对应于〜24at％的硅和〜32at％的氮，据信可以优化抑制TaSi2形成和最小化氮扩散之间的折衷。 二元金属氮化物可以形成在限流电极和相邻层之间的界面中的一个或多个处，例如金属氧化物开关层。

公开(公告)号：US20150187841A1

公开(公告)日：2015-07-02

申请号：US14140723

申请日：2013-12-26

Applicant: Intermolecular Inc.

Inventor： Yun Wang ,  Mihir Tendulkar ,  Milind Weling

IPC: H01L27/24 ,  H01L49/02 ,  H01L45/00

CPC classification number: H01L27/2463 ,  H01L27/24 ,  H01L27/2409 ,  H01L27/2481 ,  H01L28/24 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and a variable resistance layer that are interconnected in series by, for example, stacking the two. The embedded resistor prevents excessive electrical currents through the variable resistance layer thereby preventing its over-programming. The embedded resistor is configured to maintain a constant resistance during the operation of the ReRAM cell, such as applying switching currents and changing the resistance of the variable resistance layer. Specifically, the embedded resistor may be electrically broken down during fabrication of the ReRAM cell to improve the subsequent stability of the embedded resistance to electrical fields during operation of the ReRAM cell. The embedded resistor may be made from materials that allow this initial breakdown and to avoid future breakdowns, such metal silicon nitrides, metal aluminum nitrides, and metal boron nitrides.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 ReRAM单元包括嵌入式电阻器和可变电阻层，其通过例如堆叠两者串联互连。 嵌入式电阻器阻止通过可变电阻层的过大电流，从而防止其过度编程。 嵌入式电阻器被配置为在ReRAM单元的操作期间保持恒定的电阻，例如施加开关电流并改变可变电阻层的电阻。 具体地说，在ReRAM单元的制造期间，嵌入式电阻器可能被电分解，以提高在ReRAM单元操作期间嵌入电阻对电场的后续稳定性。 嵌入式电阻器可以由允许该初始击穿并避免将来击穿的材料制成，例如金属氮化硅，金属氮化铝和金属氮化硼。

公开(公告)号：US08981332B2

公开(公告)日：2015-03-17

申请号：US13838640

申请日：2013-03-15

Applicant: Intermolecular Inc.

Inventor： Tony P. Chiang ,  Dipankar Pramanik ,  Milind Weling

IPC: H01L47/00 ,  G11C13/00

CPC classification number: H01L45/1253 ,  G11C13/0002 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/33 ,  G11C2213/34 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146

Abstract: A nonvolatile resistive memory element includes an oxygen-gettering layer. The oxygen-gettering layer is formed as part of an electrode stack, and is more thermodynamically favorable in gettering oxygen than other layers of the electrode stack. The Gibbs free energy of formation (ΔfG°) of an oxide of the oxygen-gettering layer is less (i.e., more negative) than the Gibbs free energy of formation of an oxide of the adjacent layers of the electrode stack. The oxygen-gettering layer reacts with oxygen present in the adjacent layers of the electrode stack, thereby preventing this oxygen from diffusing into nearby silicon layers to undesirably increase an SiO2 interfacial layer thickness in the memory element and may alternately be selected to decrease such thickness during subsequent processing.

公开(公告)号：US09331276B2

公开(公告)日：2016-05-03

申请号：US14618138

申请日：2015-02-10

Applicant: Intermolecular Inc.

Inventor： Tony P. Chiang ,  Dipankar Pramanik ,  Milind Weling

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

CPC classification number: H01L45/1253 ,  G11C13/0002 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/33 ,  G11C2213/34 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146

Abstract: A nonvolatile resistive memory element includes an oxygen-gettering layer. The oxygen-gettering layer is formed as part of an electrode stack, and is more thermodynamically favorable in gettering oxygen than other layers of the electrode stack. The Gibbs free energy of formation (ΔfG°) of an oxide of the oxygen-gettering layer is less (i.e., more negative) than the Gibbs free energy of formation of an oxide of the adjacent layers of the electrode stack. The oxygen-gettering layer reacts with oxygen present in the adjacent layers of the electrode stack, thereby preventing this oxygen from diffusing into nearby silicon layers to undesirably increase an SiO2 interfacial layer thickness in the memory element and may alternately be selected to decrease such thickness during subsequent processing.

公开(公告)号：US09246094B2

公开(公告)日：2016-01-26

申请号：US14140683

申请日：2013-12-26

Applicant: Intermolecular Inc.

Inventor： Yun Wang ,  Federico Nardi ,  Milind Weling

IPC: H01L47/00 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1266 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625 ,  H01L45/1633

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. The resistive switching nonvolatile memory cells may include a first layer disposed. The first layer may be operable as a bottom electrode. The resistive switching nonvolatile memory cells may also include a second layer disposed over the first layer. The second layer may be operable as a resistive switching layer that is configured to switch between a first resistive state and a second resistive state. The resistive switching nonvolatile memory cells may include a third layer disposed over the second layer. The third layer may be operable as a resistive layer that is configured to determine, at least in part, an electrical resistivity of the resistive switching nonvolatile memory element. The third layer may include a semi-metallic material. The resistive switching nonvolatile memory cells may include a fourth layer that may be operable as a top electrode.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 电阻式开关非易失性存储单元可以包括设置的第一层。 第一层可以用作底部电极。 电阻式开关非易失性存储单元还可以包括设置在第一层上的第二层。 第二层可以用作电阻性开关层，其被配置为在第一电阻状态和第二电阻状态之间切换。 电阻式开关非易失性存储单元可以包括设置在第二层上的第三层。 第三层可以用作电阻层，其被配置为至少部分地确定电阻式开关非易失性存储元件的电阻率。 第三层可以包括半金属材料。 电阻式开关非易失性存储单元可以包括可以用作顶部电极的第四层。

公开(公告)号：US09231203B1

公开(公告)日：2016-01-05

申请号：US14565097

申请日：2014-12-09

Applicant: Intermolecular Inc.

Inventor： Mihir Tendulkar ,  Milind Weling

IPC: H01L21/06 ,  H01L47/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L45/00

CPC classification number: H01L45/145 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16

Abstract: Provided are memory cells, such as resistive random access memory (ReRAM) cells, and methods of fabricating such cells. A cell includes an embedded resistor and resistive switching layer connected in series within the embedded resistor. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state. The embedded resistor includes a stoichiometric nitride that has a bandgap of less than 2 eV. The embedded resistor is configured to maintain a substantially constant resistance throughout fabrication and operation of the cell, such as annealing the cell and subjecting the cell to forming and switching signals. The stoichiometric nitride may be one of hafnium nitride, zirconium nitride, or titanium nitride. The embedded resistor may also include a dopant, such as tantalum, niobium, vanadium, tungsten, molybdenum, or chromium.

Abstract translation: 提供了存储单元，例如电阻随机存取存储器（ReRAM）单元，以及制造这样的单元的方法。 单元包括在嵌入式电阻器内串联连接的嵌入式电阻器和电阻开关层。 嵌入式电阻器可防止电阻开关层过多的电流，特别是当电阻式开关层切换到低电阻状态时。 嵌入式电阻器包括具有小于2eV的带隙的化学计量氮化物。 嵌入式电阻器被配置为在电池的整个制造和操作过程中保持基本恒定的电阻，例如退火电池并使电池成形和切换信号。 化学计量氮化物可以是氮化铪，氮化锆或氮化钛之一。 嵌入式电阻器还可以包括掺杂剂，例如钽，铌，钒，钨，钼或铬。

公开(公告)号：US20150155485A1

公开(公告)日：2015-06-04

申请号：US14618138

申请日：2015-02-10

Applicant: Intermolecular Inc.

Inventor： Tony P. Chiang ,  Dipankar Pramanik ,  Milind Weling

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1253 ,  G11C13/0002 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/33 ,  G11C2213/34 ,  G11C2213/52 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146

Abstract: A nonvolatile resistive memory element includes an oxygen-gettering layer. The oxygen-gettering layer is formed as part of an electrode stack, and is more thermodynamically favorable in gettering oxygen than other layers of the electrode stack. The Gibbs free energy of formation (ΔfG°) of an oxide of the oxygen-gettering layer is less (i.e., more negative) than the Gibbs free energy of formation of an oxide of the adjacent layers of the electrode stack. The oxygen-gettering layer reacts with oxygen present in the adjacent layers of the electrode stack, thereby preventing this oxygen from diffusing into nearby silicon layers to undesirably increase an SiO2 interfacial layer thickness in the memory element and may alternately be selected to decrease such thickness during subsequent processing.

Abstract translation: 非易失性电阻性存储元件包括吸氧层。 吸氧层形成为电极堆叠的一部分，并且在吸电氧中比电极堆叠的其它层更热力学上更有利。 氧吸收层的氧化物的吉布斯自由能（＆Dgr; fG°）比形成电极堆叠的相邻层的氧化物的吉布斯自由能更少（即更负）。 吸氧层与存在于电极堆叠的相邻层中的氧气反应，从而防止这种氧扩散到附近的硅层中，从而不期望地增加存储元件中的SiO 2界面层厚度，并且可以选择以减少这种厚度 后续处理。

公开(公告)号：US08912518B2

公开(公告)日：2014-12-16

申请号：US13671824

申请日：2012-11-08

Applicant: Intermolecular, Inc.

Inventor： David Chi ,  Vidyut Gopal ,  Minh Huu Le ,  Minh Anh Nguyen ,  Dipankar Pramanik ,  Milind Weling

IPC: H01L29/02 ,  H01L47/00 ,  G11C11/00 ,  H01L45/00 ,  G11C13/00

CPC classification number: H01L45/145 ,  G11C13/0007 ,  G11C2213/32 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1616

Abstract: Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from doped metal oxides and/or nitrides. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature annealing. In some embodiments, the breakdown voltage of a current limiting layer may be at least about 8V. Some examples of such current limiting layers include titanium oxide doped with niobium, tin oxide doped with antimony, and zinc oxide doped with aluminum. Dopants and base materials may be deposited as separate sub-layers and then redistributed by annealing or may be co-deposited using reactive sputtering or co-sputtering. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layer while maintaining their performance.

Abstract translation: 提供了诸如电阻随机存取存储器（ReRAM）单元的半导体器件，其包括由掺杂的金属氧化物和/或氮化物形成的限流层。 这些限流层可具有至少约1欧姆 - 厘米的电阻率。 即使当这些层受到强电场和/或高温退火时，也保持该电阻率水平。 在一些实施例中，限流层的击穿电压可以为至少约8V。 这种电流限制层的一些实例包括掺杂有铌的氧化钛，掺杂有锑的氧化锡和掺杂有铝的氧化锌。 掺杂剂和基材可以作为单独的子层沉积，然后通过退火重新分布，或者可以使用反应溅射或共溅射共沉积。 层的高电阻率允许在保持其性能的同时缩小包括这些层的半导体器件的尺寸。

公开(公告)号：US20150188045A1

公开(公告)日：2015-07-02

申请号：US14140683

申请日：2013-12-26

Applicant: Intermolecular Inc.

Inventor： Yun Wang ,  Federico Nardi ,  Milind Weling

IPC: H01L45/00

CPC classification number: H01L45/1266 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625 ,  H01L45/1633

Abstract: Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. The resistive switching nonvolatile memory cells may include a first layer disposed. The first layer may be operable as a bottom electrode. The resistive switching nonvolatile memory cells may also include a second layer disposed over the first layer. The second layer may be operable as a resistive switching layer that is configured to switch between a first resistive state and a second resistive state. The resistive switching nonvolatile memory cells may include a third layer disposed over the second layer. The third layer may be operable as a resistive layer that is configured to determine, at least in part, an electrical resistivity of the resistive switching nonvolatile memory element. The third layer may include a semi-metallic material. The resistive switching nonvolatile memory cells may include a fourth layer that may be operable as a top electrode.

Abstract translation: 提供了电阻随机存取存储器（ReRAM）单元及其制造方法。 电阻式开关非易失性存储单元可以包括设置的第一层。 第一层可以用作底部电极。 电阻式开关非易失性存储单元还可以包括设置在第一层上的第二层。 第二层可以用作电阻性开关层，其被配置为在第一电阻状态和第二电阻状态之间切换。 电阻式开关非易失性存储单元可以包括设置在第二层上的第三层。 第三层可以用作电阻层，其被配置为至少部分地确定电阻式开关非易失性存储元件的电阻率。 第三层可以包括半金属材料。 电阻式开关非易失性存储单元可以包括可以用作顶部电极的第四层。