发明申请
- 专利标题： Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application Thereof
- 专利标题（中）： 相变存储器中使用的富锑高速相变材料，制备方法及其应用
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申请号： US14129957申请日： 2012-12-27
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公开(公告)号： US20150207070A1公开(公告)日： 2015-07-23
- 发明人: Zhitang Song , Liangcai Wu , Cheng Peng , Feng Rao , Min Zhu
- 申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY
- 优先权： CN20121033521.8 20120911
- 国际申请： PCT/CN2012/087596 WO 20121227
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; C23C14/34 ; C23C14/35
摘要：
The present invention relates to a metal element doped phase-change material in the field of micro-electronics technologies, specifically to an antimony-rich high-speed phase-change material used in a phase-change memory (PCRAM), a preparing method and an application thereof. The antimony-rich high-speed phase-change material used in a PCRAM has a chemical formula being Ax(Sb2Te)1−x, x is an atom percent, where A is selected from W, Ti, Ta, and Mn, and 0
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