公开(公告)号：US10482955B2

公开(公告)日：2019-11-19

申请号：US15739883

申请日：2015-12-24

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

发明人： Sannian Song ,  Xiaogang Chen ,  Zhitang Song ,  Tianqi Guo

IPC分类号： G11C11/00 ,  G11C13/00 ,  H01L27/10 ,  H01L27/24 ,  H01L45/00 ,  G11C7/10 ,  G11C11/54

摘要： A storage array and a storage chip and method for storing a logic relationship between objects. The storage array comprises first leading-out wires and second leading-out wires, and a storage unit is connected between each first leading-out wire and each second leading-out wire having different serial numbers. A controllable switch is connected between each first leading-out wire and each second leading-out wire having a same serial number. The storage chip comprises an interface module. A control module is used for producing a control signal. A driving module is used for producing write current, erase current or read current. A first decoder and a second decoder are used for gating the first leading-out wires and the second leading-out wires. A storage array is used for storing a logic relationship value. The storage method comprises write and read operations.

公开(公告)号：US10679697B2

公开(公告)日：2020-06-09

申请号：US15739724

申请日：2016-08-25

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

发明人： Yu Lei ,  Houpeng Chen ,  Xi Li ,  Qian Wang ,  Zhitang Song

IPC分类号： G11C13/00 ,  G11C7/14

摘要： A read circuit of storage class memory comprises: an array; a read reference circuit, having the same bit line parasitic parameters as the array, having the same read transmission gate parasitic parameters as the array, used to generate a read reference current; a sense amplifier, providing the same current mirror parasitic parameters as the reference side, used to generate a read current from a selected memory cell, compare the said read current with the said read reference current and output a readout result. In the present invention, the said read current and the said read reference current are generated at the same time, the transient curve of the said read reference current is between the low resistance state read current and the high resistance state read current from an early stage. The present invention largely reduces the read access time, has a good process variation tolerance, has a wide application, and is easy to be used in the practical product.

公开(公告)号：US20150207070A1

公开(公告)日：2015-07-23

申请号：US14129957

申请日：2012-12-27

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY

发明人： Zhitang Song ,  Liangcai Wu ,  Cheng Peng ,  Feng Rao ,  Min Zhu

IPC分类号： H01L45/00 ,  C23C14/34 ,  C23C14/35

CPC分类号： H01L45/144 ,  C23C14/0623 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/352 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1625

摘要： The present invention relates to a metal element doped phase-change material in the field of micro-electronics technologies, specifically to an antimony-rich high-speed phase-change material used in a phase-change memory (PCRAM), a preparing method and an application thereof. The antimony-rich high-speed phase-change material used in a PCRAM has a chemical formula being Ax(Sb2Te)1−x, x is an atom percent, where A is selected from W, Ti, Ta, and Mn, and 0

摘要翻译： 本发明涉及微电子技术领域的金属元素掺杂相变材料，具体涉及用于相变存储器（PCRAM）的富锑高速相变材料，制备方法和 其应用。 在PCRAM中使用的富锑高速相变材料具有化学式为Ax（Sb 2 Te）1-x，x为原子百分数，其中A选自W，Ti，Ta和Mn，0

公开(公告)号：US10411187B2

公开(公告)日：2019-09-10

申请号：US15739858

申请日：2016-08-23

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

发明人： Feng Rao ,  Zhitang Song ,  Keyuan Ding ,  Yong Wang

IPC分类号： H01L45/00 ,  G11C13/00

摘要： A phase change material for a phase change memory and a preparing method thereof. The phase change material for a phase change memory has a chemical formula of Sc100-x-y-zGexSbyTez, wherein 0≤x≤60, 0≤y≤90, 0

公开(公告)号：US09362493B2

公开(公告)日：2016-06-07

申请号：US14129955

申请日：2012-12-26

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

发明人： Feng Rao ,  Kun Ren ,  Zhitang Song ,  Yuefeng Gong ,  Wanchun Ren

IPC分类号： H01L45/00

CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1641 ,  H01L45/1666

摘要： The present invention provides a phase-change storage unit for replacing DRAM and FLASH and a manufacturing method thereof, and the phase-change storage unit includes a phase-change material layer and a cylindrical lower electrode being in contact with and located below the phase-change material layer, where the phase-change material layer is formed by connecting a side wall layer and a round bottom layer, forms a hollow cylinder or hollow inverted conical frustum having an opening at an upper part, and the hollow cylinder or hollow inverted conical frustum is internally filled with a medium layer. The present invention adopts the means of preparing a phase-change material layer with a vertical side wall layer and a phase-change material layer with a slant side wall layer, in which a medium material is filled, and adopts the means of a small electrode, so as to reduce the thickness of the phase-change material layer, thereby reducing the phase-change region during the operation, improving the heat stability and the phase-change speed of the phase-change material layer, and finally achieving purposes of reducing the operating power consumption, improving the device data holding capability, increasing the operating speed of the device, and increasing the number of times of cyclic operating of the device.

摘要翻译： 本发明提供一种用于替换DRAM和闪存的相变存储单元及其制造方法，并且相变存储单元包括相变材料层和与相位变换材料层相接触并位于其上的圆柱形下电极， 改变材料层，其中通过连接侧壁层和圆底层形成相变材料层，形成在上部具有开口的中空圆柱体或中空倒圆锥形截头锥体，并且中空圆柱体或中空倒圆锥形 锥体内部填充有中等层。 本发明采用制备具有垂直侧壁层的相变材料层和具有倾斜侧壁层的相变材料层的方法，其中填充介质材料，并且采用小电极的装置 ，以减小相变材料层的厚度，由此减少操作期间的相变区域，提高相变材料层的热稳定性和相变速度，最终达到减少相变材料层的目的 操作功耗，提高设备数据保持能力，提高设备运行速度，增加设备循环运行次数。

公开(公告)号：US20150221863A1

公开(公告)日：2015-08-06

申请号：US14123454

申请日：2012-12-27

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY

发明人： Zhitang Song ,  Yuefeng Gong ,  Feng Rao ,  Bo Liu ,  Yong Kang ,  Bangming Chen

IPC分类号： H01L45/00

CPC分类号： H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1608

摘要： The present invention provides a phase-change storage unit containing a TiSiN material layer and a method for preparing the same. The phase-change storage unit includes a phase-change material layer and a lower electrode located there below, the phase-change material layer and the lower electrode are connected by a TiSiN material layer, the lower electrode includes a bottom and a sheet side connected to the bottom, the sheet side is perpendicular to the bottom to form a blade structure, and the top of the sheet side contacts the TiSiN material layer. The present invention adopts annealing to increase the grain size of the electrode so as to reduce the overall resistance of the device and form a TiSiN material layer on the top of the lower electrode so as to reduce the effective operation region. The phase-change storage unit of the present invention is applied to a phase-change memory to achieve the advantages such as low power consumption, high density and high data retention performance.

摘要翻译： 本发明提供一种含有TiSiN材料层的相变储存单元及其制备方法。 相变存储单元包括位于其下方的相变材料层和下电极，相变材料层和下电极通过TiSiN材料层连接，下电极包括底部和片侧连接 在底部，片侧垂直于底部以形成刀片结构，并且片侧的顶部接触TiSiN材料层。 本发明采用退火以增加电极的晶粒尺寸，从而降低器件的整体电阻，并在下电极的顶部形成TiSiN材料层，以减少有效的工作区域。 本发明的相变存储单元适用于相变存储器，以实现低功耗，高密度和高数据保存性能等优点。

公开(公告)号：US11568931B2

公开(公告)日：2023-01-31

申请号：US15739723

申请日：2017-04-25

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY

发明人： Yu Lei ,  Houpeng Chen ,  Zhitang Song

IPC分类号： G11C11/00 ,  G11C13/00

摘要： A read-out circuit and a read-out method for a three-dimensional memory, comprises a read reference circuit and a sensitive amplifier, the read reference circuit produces read reference current capable of quickly distinguishing reading low-resistance state unit current and reading high-resistance state unit current. The read reference circuit comprises a reference unit, a bit line matching module, a word line matching module and a transmission gate parasitic parameter matching module. With respect to the parasitic effect and electric leakage of the three-dimensional memory in the plane and vertical directions, the present invention introduces the matching of bit line parasite parameters, leakage current and transmission gate parasitic parameters into the read reference current, and introduces the matching of parasitic parameters of current mirror into the read current, thereby eliminating the phenomenon of pseudo reading and reducing the read-out time.

公开(公告)号：US10066128B2

公开(公告)日：2018-09-04

申请号：US15219540

申请日：2016-07-26

申请人： Shanghai Xinanna Electronic Technology Co., LTD ,  Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

发明人： Weilei Wang ,  Weili Liu ,  Zhitang Song

IPC分类号： C09G1/02 ,  C09K3/14

摘要： The present disclosure provides a method for preparing an aluminum oxide polishing solution. The methods include: 1) mixing a silane coupling agent, ethyl alcohol, and water to form a hydrolysate; 2) under a condition of heating and stirring at a temperature between 95° C. and 110° C., adding the hydrolysate into aluminum oxide powder; keeping stirring while heating till liquid is completely volatilized, thereby obtaining a modified aluminum oxide; 3) grinding the modified aluminum oxide into powder and dispersing the powder into water; adjusting solution pH to 9.5-10.5, thereby obtaining the aluminum oxide polishing solution. It may achieve a polishing efficiency of pH=13.00 by using the aluminum oxide polishing solution of the present disclosure; meanwhile, less scratches will occur to a polishing disc.

公开(公告)号：US20170362463A1

公开(公告)日：2017-12-21

申请号：US15219540

申请日：2016-07-26

申请人： Shanghai Xinanna Electronic Technology Co., LTD ,  Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

发明人： Weilei Wang ,  Weili Liu ,  Zhitang Song

IPC分类号： C09G1/02 ,  C09K3/14

CPC分类号： C09G1/02 ,  C09K3/1436

摘要： The present disclosure provides a method for preparing an aluminum oxide polishing solution. The methods include: 1) mixing a silane coupling agent, ethyl alcohol, and water to form a hydrolysate; 2) under a condition of heating and stirring at a temperature between 95° C. and 110° C., adding the hydrolysate into aluminum oxide powder; keeping stirring while heating till liquid is completely volatilized, thereby obtaining a modified aluminum oxide; 3) grinding the modified aluminum oxide into powder and dispersing the powder into water; adjusting solution pH to 9.5-10.5, thereby obtaining the aluminum oxide polishing solution. It may achieve a polishing efficiency of pH=13.00 by using the aluminum oxide polishing solution of the present disclosure; meanwhile, less scratches will occur to a polishing disc.

公开(公告)号：US20150188041A1

公开(公告)日：2015-07-02

申请号：US14129955

申请日：2012-12-26

申请人： SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES

发明人： Feng Rao ,  Kun Ren ,  Zhitang Song ,  Yuefeng Gong ,  Wanchun Ren

IPC分类号： H01L45/00

CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/1616 ,  H01L45/1641 ,  H01L45/1666

摘要： The present invention provides a phase-change storage unit for replacing DRAM and FLASH and a manufacturing method thereof, and the phase-change storage unit includes a phase-change material layer and a cylindrical lower electrode being in contact with and located below the phase-change material layer, where the phase-change material layer is formed by connecting a side wall layer and a round bottom layer, forms a hollow cylinder or hollow inverted conical frustum having an opening at an upper part, and the hollow cylinder or hollow inverted conical frustum is internally filled with a medium layer. The present invention adopts the means of preparing a phase-change material layer with a vertical side wall layer and a phase-change material layer with a slant side wall layer, in which a medium material is filled, and adopts the means of a small electrode, so as to reduce the thickness of the phase-change material layer, thereby reducing the phase-change region during the operation, improving the heat stability and the phase-change speed of the phase-change material layer, and finally achieving purposes of reducing the operating power consumption, improving the device data holding capability, increasing the operating speed of the device, and increasing the number of times of cyclic operating of the device.

摘要翻译： 本发明提供一种用于替换DRAM和闪存的相变存储单元及其制造方法，并且相变存储单元包括相变材料层和与相位变换材料层相接触并位于其上的圆柱形下电极， 改变材料层，其中通过连接侧壁层和圆底层形成相变材料层，形成在上部具有开口的中空圆柱体或中空倒圆锥形截头锥体，并且中空圆柱体或中空倒圆锥形 锥体内部填充有中等层。 本发明采用制备具有垂直侧壁层的相变材料层和具有倾斜侧壁层的相变材料层的方法，其中填充介质材料，并且采用小电极的装置 ，以减小相变材料层的厚度，由此减少操作期间的相变区域，提高相变材料层的热稳定性和相变速度，最终达到减少相变材料层的目的 操作功耗，提高设备数据保持能力，提高设备运行速度，增加设备循环运行次数。