Invention Application
- Patent Title: ACQUISITION METHOD FOR S-PARAMETERS IN MICROWAVE INTRODUCTION MODULES, AND MALFUNCTION DETECTION METHOD
- Patent Title (中): 微波介绍模块中S参数的采集方法及其功能检测方法
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Application No.: US14413170Application Date: 2013-06-11
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Publication No.: US20150212127A1Publication Date: 2015-07-30
- Inventor: Taro Ikeda , Yutaka Fujino , Hikaru Adachi , Hiroyuki Miyashita , Yuki Osada , Nobuhiko Yamamoto
- Applicant: TOKYO ELECTRON LIMITED
- Priority: JP2012-153902 20120709
- International Application: PCT/JP2013/066016 WO 20130611
- Main IPC: G01R27/06
- IPC: G01R27/06 ; G01R27/28

Abstract:
A plasma processing apparatus (1) includes a processing container (2) and a microwave introduction device (5) having a plurality of microwave introduction modules (61). A microwave is introduced for each of the plurality of microwave introduction modules (61), and S-parameters for each of combinations of the plurality of microwave introduction modules (61) are obtained based on the introduced microwave and a reflected microwave reflected from the processing container (2) into the plurality of microwave introduction modules (61).
Public/Granted literature
- US09702913B2 Acquisition method for S-parameters in microwave introduction modules, and malfunction detection method Public/Granted day:2017-07-11
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