Plasma processing apparatus and lower stage

    公开(公告)号:US11929234B2

    公开(公告)日:2024-03-12

    申请号:US17299483

    申请日:2019-11-26

    Abstract: A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.

    Plasma processing apparatus
    4.
    发明授权

    公开(公告)号:US11908663B2

    公开(公告)日:2024-02-20

    申请号:US17299430

    申请日:2019-11-26

    CPC classification number: H01J37/32568 H01J37/32082 H01J37/32449

    Abstract: Provided is a plasma processing apparatus capable of suppressing abnormal discharge. The plasma processing apparatus includes: an upper electrode and a lower electrode which are disposed inside a processing container so as to face each other inside the processing container; and a dielectric shower for gas introduction disposed below the upper electrode, wherein the plasma processing apparatus generates plasma in a space between the upper electrode and the lower electrode. The upper electrode includes: at least one slot configured to introduce VHF waves into the processing container; and a gas flow path provided independently of the at least one slot and in communication with the dielectric shower.

    Plasma processing apparatus and control method

    公开(公告)号:US11600475B2

    公开(公告)日:2023-03-07

    申请号:US16942145

    申请日:2020-07-29

    Abstract: A plasma processing apparatus includes a main container, one or more radio frequency antennas, a plurality of metal windows, and a plasma detector. The one or more radio frequency antennas are configured to generate inductively coupled plasma in a plasma generation region in the main container. The metal windows are disposed between the plasma generation region and the radio frequency antennas while being insulated from each other and from the main container. Further, a plasma detector is connected to each of the metal windows and configured to detect a plasma state.

    Plasma probe device and plasma processing apparatus

    公开(公告)号:US11164730B2

    公开(公告)日:2021-11-02

    申请号:US16122226

    申请日:2018-09-05

    Abstract: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

    SHOWER PLATE, LOWER DIELECTRIC MEMBER AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20210043426A1

    公开(公告)日:2021-02-11

    申请号:US16984778

    申请日:2020-08-04

    Abstract: A shower plate includes a plate-shaped dielectric main body having gas holes, and a plurality of sealed areas formed in the dielectric main body. Each of the sealed areas has a permittivity lower than a permittivity of the dielectric main body. A volume density of the sealed areas at a central region of the dielectric main body is higher than a volume density of the sealed areas at a peripheral region of the dielectric main body.

    Power combiner and microwave introduction mechanism

    公开(公告)号:US09704693B2

    公开(公告)日:2017-07-11

    申请号:US15166561

    申请日:2016-05-27

    CPC classification number: H01J37/3222 H01J37/32266 H01P1/18 H01P5/12 H03H7/40

    Abstract: A power combiner includes a main body composed of outer and inner conductors, a plurality of power introduction ports configured to introduce electromagnetic wave powers supplied through power supply lines into the main body, a power combining antenna configured to radiate electromagnetic waves to a space between the outer and inner conductors such that the powers are combined, and an output port through which the combined electromagnetic wave is outputted from the main body. The power combining antenna includes a plurality of antenna members, each of which has a first pole and a second pole that is in contact with the inner conductor, and a reflection part configured to reflect the electromagnetic waves.

    Antenna for plasma generation, plasma processing apparatus and plasma processing method
    10.
    发明授权
    Antenna for plasma generation, plasma processing apparatus and plasma processing method 有权
    等离子体发生天线,等离子体处理装置和等离子体处理方法

    公开(公告)号:US09552966B2

    公开(公告)日:2017-01-24

    申请号:US14364434

    申请日:2012-12-05

    Abstract: An antenna for plasma generation radiates a microwave transmitted through a coaxial waveguide into a processing chamber and propagates the microwave on a metal surface of the processing chamber to convert gas into surface wave plasma. The antenna includes a gas flow path for passing the gas through the antenna, a plurality of gas holes that communicate with the gas flow path and introduce the gas into the processing chamber, and a plurality of slots that are separated from the gas flow path and penetrate through the gas flow path. The slots pass the microwave transmitted through the coaxial waveguide and a slow-wave plate to the processing chamber. A first space between portions of adjacent slots penetrating through the gas flow path is arranged to be wider than a second space between portions of the adjacent slots opening out to a plasma generation space of the processing chamber.

    Abstract translation: 用于等离子体生成的天线将通过同轴波导传输的微波辐射到处理室中,并将微波传播到处理室的金属表面上,以将气体转换成表面波等离子体。 天线包括用于使气体通过天线的气体流动通道,与气体流动路径连通并将气体引入处理室的多个气体孔,以及与气体流动路径分离的多个槽, 穿透气体流路。 这些槽将通过同轴波导传送的微波和慢波板通过处理室。 穿过气体流动路径的相邻槽的部分之间的第一空间布置成比通过处理室的等离子体产生空间的相邻槽的部分之间的第二空间宽。

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