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    Plasma probe device and plasma processing apparatus
    1.
    发明授权
    Plasma probe device and plasma processing apparatus 有权

    公开(公告)号：US11164730B2

    公开(公告)日：2021-11-02

    申请号：US16122226

    申请日：2018-09-05

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Taro Ikeda ,  Tomohito Komatsu ,  Yuki Osada ,  Hiroyuki Miyashita ,  Susumu Saito ,  Kazuhiro Furuki ,  Mikio Sato ,  Eiki Kamata

    IPC: H01J37/32

    Abstract: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

    Power combiner and microwave introduction mechanism
    2.
    发明授权
    Power combiner and microwave introduction mechanism 有权

    公开(公告)号：US09704693B2

    公开(公告)日：2017-07-11

    申请号：US15166561

    申请日：2016-05-27

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Taro Ikeda ,  Hiroyuki Miyashita

    IPC: H01J37/32 ,  H01P5/12 ,  H01P1/18 ,  H03H7/40

    CPC classification number: H01J37/3222 ,  H01J37/32266 ,  H01P1/18 ,  H01P5/12 ,  H03H7/40

    Abstract: A power combiner includes a main body composed of outer and inner conductors, a plurality of power introduction ports configured to introduce electromagnetic wave powers supplied through power supply lines into the main body, a power combining antenna configured to radiate electromagnetic waves to a space between the outer and inner conductors such that the powers are combined, and an output port through which the combined electromagnetic wave is outputted from the main body. The power combining antenna includes a plurality of antenna members, each of which has a first pole and a second pole that is in contact with the inner conductor, and a reflection part configured to reflect the electromagnetic waves.

    Plasma processing apparatus
    4.
    发明授权
    Plasma processing apparatus 有权

    公开(公告)号：US12205799B2

    公开(公告)日：2025-01-21

    申请号：US18058989

    申请日：2022-11-28

    Applicant: Tokyo Electron Limited

    Inventor： Isao Gunji ,  Hiroyuki Miyashita

    IPC: H01J37/32

    Abstract: A plasma processing apparatus includes: a processing container; a ceiling wall forming a part of the processing container and including an opening; and a transmission window configured to close the opening, wherein the opening under the transmission window is formed as a recess portion, wherein the recess portion is a supply port for supplying electromagnetic waves from the transmission window into the processing container, wherein first gas supply holes are formed on a lower surface of the ceiling wall, and wherein second gas supply holes are formed on an inner surface of the recess portion.

    Apparatus and method for heat-treating substrate
    6.
    发明授权
    Apparatus and method for heat-treating substrate 有权

    公开(公告)号：US11488847B2

    公开(公告)日：2022-11-01

    申请号：US16919464

    申请日：2020-07-02

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Hiroyuki Miyashita ,  Shohei Yoshida ,  Takahisa Mase

    IPC: H01L21/67 ,  F27B17/00 ,  H01L21/66 ,  H01L21/324

    Abstract: An apparatus for heat-treating a substrate includes: a stage where the substrate is disposed; a heating part configured to change an output; a first temperature measurement part configured to measure a temperature at which the substrate is heated; a second temperature measurement part configured to measure the temperature, and having a level of measurement accuracy which is lower than that of the first temperature measurement part in a first temperature region and is higher than that of the first temperature measurement part in a second temperature region; a temperature calculator configured to calculate a weighted average temperature of the temperatures measured by the first and second temperature measurement parts if a reference temperature is in a temperature range between the first and second temperatures, and configured to change a weight of the weighted average temperature; and a controller configured to control the output based on the weighted average temperature.

    Tuner, microwave plasma source and impedance matching method
    8.
    发明授权
    Tuner, microwave plasma source and impedance matching method 有权
    调谐器，微波等离子体源和阻抗匹配方法

    公开(公告)号：US09520273B2

    公开(公告)日：2016-12-13

    申请号：US15073762

    申请日：2016-03-18

    Applicant: Tokyo Electron Limited

    Inventor： Yuki Osada ,  Hiroyuki Miyashita

    IPC: C23F1/00 ,  H01J37/32

    CPC classification number: H01J37/32311 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32256 ,  H01J37/32972

    Abstract: A tuner (43) includes a microwave transmission path (51), having a coaxial structure, configured to transmit a supplied microwave to a planar slot antenna (101); slugs (61a) and (61b made of a dielectric material and configured to be moved along the microwave transmission path (51); a slug driving unit (70) configured to move the slugs (61a) and (61b) along the microwave transmission path (51); and a control unit (80) configured to perform impedance matching by controlling positions of the slugs such that they are located at a matching position where a reflection coefficient is small, and configured to control, based on a state of the plasma, a matching track through which the slugs (61a) and (61b) reach the matching position.

    Abstract translation: 调谐器（43）包括具有同轴结构的微波传输路径（51），用于将提供的微波传输到平面缝隙天线（101）; （61a）和由电介质材料制成并被配置为沿着微波传输路径（51）移动的块塞（61a）和块塞驱动单元（70），其构造成沿着微波传输路径移动块塞（61a）和（61b） （51）;以及控制单元（80），其被配置为通过控制所述段塞的位置使得它们位于反射系数较小的匹配位置处执行阻抗匹配，并且被配置为基于等离子体的状态 （61a）和（61b）到达匹配位置的匹配轨道。

    Microwave emission mechanism, microwave plasma source and surface wave plasma processing apparatus
    9.
    发明授权
    Microwave emission mechanism, microwave plasma source and surface wave plasma processing apparatus 有权
    微波发射机制，微波等离子体源和表面波等离子体处理装置

    公开(公告)号：US09520272B2

    公开(公告)日：2016-12-13

    申请号：US14373589

    申请日：2012-12-14

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Taro Ikeda ,  Hiroyuki Miyashita ,  Yuki Osada ,  Yutaka Fujino ,  Tomohito Komatsu

    IPC: H01Q1/26 ,  H01J37/32 ,  H05H1/46

    CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3222 ,  H01J37/32229 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/4622 ,  H05H2001/463

    Abstract: A microwave emission mechanism includes: a transmission path through which a microwave is transmitted; and an antenna section that emits into a chamber the microwave transmitted through the transmission path. The antenna section includes an antenna having a slot through which the microwave is emitted, a dielectric member through which the microwave emitted from the antenna is transmitted and a closed circuit in which a surface current and a displacement current flow. A surface wave is formed in a surface of the dielectric member. The closed circuit has at least: an inner wall of the slot; and the surface and an inner portion of the dielectric member. When a wavelength of the microwave is λ0, a length of the closed circuit is nλ0±δ, where n is a positive integer and δ is a fine-tuning component including 0.

    Abstract translation: 微波发射机构包括：传输微波的传输路径; 以及天线部分，其将通过传输路径传输的微波发射到室中。 天线部分包括具有微波发射的狭缝的天线，从天线发射的微波穿过的电介质构件和表面电流和位移电流的闭合电路。 表面波形成在电介质构件的表面中。 闭路至少具有：槽的内壁; 以及电介质构件的表面和内部。 当微波的波长为λ0时，闭路电路的长度为nλ0±δ，其中n为正整数，δ为包括0的微调组件。

    MICROWAVE EMISSION MECHANISM, MICROWAVE PLASMA SOURCE AND SURFACE WAVE PLASMA PROCESSING APPARATUS
    10.
    发明申请
    MICROWAVE EMISSION MECHANISM, MICROWAVE PLASMA SOURCE AND SURFACE WAVE PLASMA PROCESSING APPARATUS 有权
    微波排放机理，微波等离子体源和表面波等离子体处理装置

    公开(公告)号：US20140361684A1

    公开(公告)日：2014-12-11

    申请号：US14373589

    申请日：2012-12-14

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Taro Ikeda ,  Hiroyuki Miyashita ,  Yuki Osada ,  Yutaka Fujino ,  Tomohito Komatsu

    IPC: H01J37/32

    CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/3222 ,  H01J37/32229 ,  H05H1/46 ,  H05H2001/4615 ,  H05H2001/4622 ,  H05H2001/463

    Abstract: A microwave emission mechanism includes: a transmission path through which a microwave is transmitted; and an antenna section that emits into a chamber the microwave transmitted through the transmission path. The antenna section includes an antenna having a slot through which the microwave is emitted, a dielectric member through which the microwave emitted from the antenna is transmitted and a closed circuit in which a surface current and a displacement current flow. A surface wave is formed in a surface of the dielectric member. The closed circuit has at least: an inner wall of the slot; and the surface and an inner portion of the dielectric member. When a wavelength of the microwave is λ0, a length of the closed circuit is nλ0±δ, where n is a positive integer and δ is a fine-tuning component including 0.

    Abstract translation: 微波发射机构包括：传输微波的传输路径; 以及天线部分，其将通过传输路径传输的微波发射到室中。 天线部分包括具有微波发射的狭缝的天线，从天线发出的微波穿过的电介质构件和表面电流和位移电流的闭合电路。 表面波形成在电介质构件的表面中。 闭路至少具有：槽的内壁; 以及电介质构件的表面和内部。 当微波的波长为λ0时，闭路电路的长度为nλ0±δ，其中n为正整数，δ为包括0的微调组件。

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