发明申请
- 专利标题： ETCHING APPARATUS
- 专利标题（中）： 蚀刻装置
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申请号： US14627002申请日： 2015-02-20
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公开(公告)号： US20150270148A1公开(公告)日： 2015-09-24
- 发明人: Kazunori Shinoda , Tsutomu Tetsuka , Kenji Maeda
- 申请人： Hitachi High-Technologies Corporation
- 专利权人： HITACHI HIGH-TECHNOLOGIES CORPORATION
- 当前专利权人： HITACHI HIGH-TECHNOLOGIES CORPORATION
- 优先权： JP2014-058745 20140320
- 主分类号： H01L21/67
- IPC分类号： H01L21/67 ; H01L21/02 ; H01L21/268 ; H01J37/32
摘要：
An etching apparatus including a processing chamber, a supply unit for reactive species, and a lamp for vacuum-ultraviolet light irradiation is prepared. In the etching apparatus, etching can be performed by repeating a first step of adsorbing the reactive species to a surface of a wafer to form byproducts, a second step of irradiating the surface of the wafer with vacuum-ultraviolet light from the lamp for vacuum-ultraviolet light irradiation, to desorb the byproducts, and a third step of exhausting the desorbed byproducts.
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