公开(公告)号：US20150270148A1

公开(公告)日：2015-09-24

申请号：US14627002

申请日：2015-02-20

申请人： Hitachi High-Technologies Corporation

发明人： Kazunori Shinoda ,  Tsutomu Tetsuka ,  Kenji Maeda

IPC分类号： H01L21/67 ,  H01L21/02 ,  H01L21/268 ,  H01J37/32

CPC分类号： H01L21/268 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32724 ,  H01J37/32853 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/31116 ,  H01L21/67115

摘要： An etching apparatus including a processing chamber, a supply unit for reactive species, and a lamp for vacuum-ultraviolet light irradiation is prepared. In the etching apparatus, etching can be performed by repeating a first step of adsorbing the reactive species to a surface of a wafer to form byproducts, a second step of irradiating the surface of the wafer with vacuum-ultraviolet light from the lamp for vacuum-ultraviolet light irradiation, to desorb the byproducts, and a third step of exhausting the desorbed byproducts.

摘要翻译： 制备包括处理室，反应物种供给单元和真空紫外线照射灯的蚀刻装置。 在蚀刻装置中，可以通过重复将反应性物质吸附到晶片的表面以形成副产物的第一步骤进行蚀刻;第二步骤，用来自灯的真空紫外线照射晶片的表面， 紫外线照射，以解除副产物，以及排出解吸附的副产物的第三步骤。

公开(公告)号：US20150068681A1

公开(公告)日：2015-03-12

申请号：US14181968

申请日：2014-02-17

申请人： Hitachi High-Technologies Corporation

发明人： Tsutomu Tetsuka ,  Makoto Satake ,  Tadayoshi Kawaguchi

IPC分类号： H01J37/32 ,  C23C16/52 ,  C23C16/507 ,  C23C16/00

摘要： A plasma processing device includes a processing chamber for generating a plasma, a vacuum window that constitutes a part of a wall of the processing chamber, induction antennas including at least two systems for generating plasma in the processing chamber, radio frequency power sources for applying the current independently to the respective induction antennas, and a controller including phase circuits for controlling the phase of the current of the radio frequency power sources of the respective systems or the current value over time, and a control unit. The controller sequentially time modulates the phase difference between currents flowing to the systems or the current value within a sample processing period to move the plasma generation position so as to make the ion incident angle to the wafer uniform in the wafer plane.

摘要翻译： 等离子体处理装置包括用于产生等离子体的处理室，构成处理室的壁的一部分的真空窗，包括至少两个用于在处理室中产生等离子体的系统的感应天线，用于施加该等离子体的射频电源 独立于各个感应天线的电流，以及包括用于控制各个系统的射频电源的电流的相位的相位电路的控制器或随时间的当前值的控制器以及控制单元。 控制器顺序地时间调制流到系统的电流之间的相位差或在样品处理周期内的当前值，以移动等离子体产生位置，以使晶片的离子入射角在晶片平面上均匀。

公开(公告)号：US10229813B2

公开(公告)日：2019-03-12

申请号：US14447608

申请日：2014-07-30

申请人： Hitachi High-Technologies Corporation

发明人： Tadayoshi Kawaguchi ,  Ryoji Nishio ,  Tsutomu Tetsuka

IPC分类号： H01J37/32 ,  H05H1/46

摘要： In a plasma processing apparatus including a processing chamber, a dielectric window for hermetically sealing the upper portion of the processing chamber, an induction antenna deployed above the dielectric window, a Faraday shield unit, and a control apparatus for controlling a first radio-frequency power source for supplying a radio-frequency power to the induction antenna, and a second radio-frequency power source for supplying a radio-frequency power to the Faraday shield unit, the Faraday shield unit includes a first Faraday shield having a first element, and a second Faraday shield having a second element deployed at a position adjacent to the first element, the control apparatus applying a time modulation to the radio-frequency powers that are respectively supplied to the first element and the second element, the phase of the first-element-supplied and time-modulated radio-frequency power being different from the phase of the second-element-supplied and time-modulated radio-frequency power.

公开(公告)号：US10217613B2

公开(公告)日：2019-02-26

申请号：US15273812

申请日：2016-09-23

申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

发明人： Tetsuo Kawanabe ,  Takumi Tandou ,  Tsutomu Tetsuka ,  Naoki Yasui

IPC分类号： H01J37/32 ,  H01L21/67 ,  C23C16/452 ,  C23C16/458 ,  C23C16/517 ,  H01L21/687

摘要： A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic wave supplier to supply electromagnetic waves for generating first plasma, a susceptor provided to an outer peripheral portion of the stage, a second high frequency power source connected to the susceptor, and a second gas supplier to supply second gas to the inside of the susceptor. The inside of the susceptor is provided with a high frequency electrode connected to the second high frequency power source and a first earth electrode disposed opposite to the high frequency electrode. The second high frequency power source supplies high frequency power while the second gas supplier supplies the second gas, thereby generating second plasma inside the susceptor.

公开(公告)号：US09097754B2

公开(公告)日：2015-08-04

申请号：US13748665

申请日：2013-01-24

申请人： Hitachi High-Technologies Corporation

发明人： Makoto Satake ,  Jun Hayakawa ,  Tsutomu Tetsuka ,  Takeshi Shimada ,  Naohiro Yamamoto ,  Atsushi Yoshida

IPC分类号： B44C1/22 ,  H01L21/302 ,  H01L21/461 ,  G01R33/09 ,  H01L21/311 ,  H01J37/32 ,  H01L43/12 ,  H01L21/3065 ,  G11B5/31 ,  B82Y25/00 ,  H01F41/30

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/3116 ,  G11C11/161 ,  H01F41/307 ,  H01F41/308 ,  H01J37/32192 ,  H01J37/32229 ,  H01L21/3065 ,  H01L21/31138 ,  H01L43/12

摘要： The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.

摘要翻译： 本发明提供一种制造具有高绝缘层与自由层的选择比的磁阻元件的方法。 制造磁阻元件的方法包括以下步骤：准备（左图，中间图）其上设置有自由层的基板，设置在第一磁性层下的固定层，以及设置在自由层之间的绝缘层的阻挡层 层和固定层，并且通过等离子体蚀刻处理（右图）自由层，其中构成阻挡层的绝缘层包含Ta元素或Ti元素。