Invention Application
- Patent Title: REAL-TIME EDGE ENCROACHMENT CONTROL FOR WAFER BEVEL
- Patent Title (中): 实时边缘加密控制WAFER BEVEL
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Application No.: US14266575Application Date: 2014-04-30
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Publication No.: US20150318150A1Publication Date: 2015-11-05
- Inventor: Andreas Fischer
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/02 ; H01L21/67 ; H01L21/3065

Abstract:
A plasma processing system includes a bottom electrode disposed in a chamber. A lower extended electrode is disposed around the bottom electrode. An upper ceramic plate is disposed above the bottom electrode in an opposing relationship. An upper extended electrode is disposed around the upper ceramic plate. A lower process exclusion zone (PEZ) ring is situated between the lower extended electrode and the bottom electrode. An upper PEZ ring is situated between the upper extended electrode and the upper ceramic plate, with the upper PEZ ring having an RF electrode ring embedded therein. The system also includes a first RF generator for generating RF power for the bottom electrode, a second RF generator for generating RF power for the RF electrode ring embedded in the upper PEZ ring, and a controller for transmitting processing instructions. The processing instructions include power settings for the first and second RF generators.
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