发明申请
- 专利标题: PROCESS FOR THE ELECTROCHEMICAL DEPOSITION OF A SEMICONDUCTOR MATERIAL
- 专利标题(中): 半导体材料的电化学沉积过程
-
申请号: US14392013申请日: 2013-07-24
-
公开(公告)号: US20150329983A1公开(公告)日: 2015-11-19
- 发明人: Gillian Reid , Philip Nigel Bartlett , Andrew Lee Hector
- 申请人: UNIVERSITY OF SOUTHAMPTON
- 优先权: GB1213589.3 20120727
- 国际申请: PCT/GB2013/000322 WO 20130724
- 主分类号: C25D7/12
- IPC分类号: C25D7/12 ; C25D3/56 ; C25D3/44 ; C25D5/02 ; C25D3/02 ; H01L45/00 ; C25D3/54
摘要:
A process for the electrochemical deposition of a semiconductor material, which process comprises: (i) providing a non-aqueous solvent; (ii) providing at least one precursor salt which forms a source of the constituent elements within the semiconductor material to be deposited; and (iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent, characterised in that: (iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and (v) the non-aqueous solvent is a halocarbon non-aqueous solvent.
公开/授权文献
信息查询