公开(公告)号：US09322108B2

公开(公告)日：2016-04-26

申请号：US14392013

申请日：2013-07-24

Applicant: University of Southampton

Inventor： Gillian Reid ,  Philip Nigel Bartlett ,  Andrew Lee Hector

IPC: C25D3/00 ,  C25D3/02 ,  C25D7/12 ,  H01L45/00 ,  C25D5/02 ,  C25D3/34 ,  C25D3/32 ,  C25D3/30 ,  C25D3/26 ,  C25D3/36 ,  C25D3/60 ,  H01L21/02 ,  C25D3/44 ,  C25D3/54 ,  C25D3/56 ,  C25D5/18 ,  C25D9/08

CPC classification number: C25D7/12 ,  C25D3/02 ,  C25D3/26 ,  C25D3/30 ,  C25D3/32 ,  C25D3/34 ,  C25D3/36 ,  C25D3/44 ,  C25D3/54 ,  C25D3/56 ,  C25D3/60 ,  C25D5/02 ,  C25D5/18 ,  C25D9/08 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02549 ,  H01L21/02628 ,  H01L45/06 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1683

Abstract: A process for the electrochemical deposition of a semiconductor material, which process comprises: (i) providing a non-aqueous solvent; (ii) providing at least one precursor salt which forms a source of the constituent elements within the semiconductor material to be deposited; and (iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent, characterized in that: (iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and (v) the non-aqueous solvent is a halocarbon non-aqueous solvent.

Abstract translation: 一种用于半导体材料的电化学沉积的方法，该方法包括：（i）提供非水溶剂; （ii）提供至少一种在待沉积的半导体材料内形成组成元素源的前体盐; 以及（iii）使用所述前体盐在所述非水溶剂中将所述半导体材料电沉积到电极基板上，其特征在于：（iv）所述半导体材料是含有至少一个的p块或后过渡金属半导体材料 p-块元素或过渡后金属; 和（v）非水溶剂是卤代烃非水溶剂。

公开(公告)号：US20150329983A1

公开(公告)日：2015-11-19

申请号：US14392013

申请日：2013-07-24

Applicant: UNIVERSITY OF SOUTHAMPTON

Inventor： Gillian Reid ,  Philip Nigel Bartlett ,  Andrew Lee Hector

IPC: C25D7/12 ,  C25D3/56 ,  C25D3/44 ,  C25D5/02 ,  C25D3/02 ,  H01L45/00 ,  C25D3/54

CPC classification number: C25D7/12 ,  C25D3/02 ,  C25D3/26 ,  C25D3/30 ,  C25D3/32 ,  C25D3/34 ,  C25D3/36 ,  C25D3/44 ,  C25D3/54 ,  C25D3/56 ,  C25D3/60 ,  C25D5/02 ,  C25D5/18 ,  C25D9/08 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02549 ,  H01L21/02628 ,  H01L45/06 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1683

Abstract: A process for the electrochemical deposition of a semiconductor material, which process comprises: (i) providing a non-aqueous solvent; (ii) providing at least one precursor salt which forms a source of the constituent elements within the semiconductor material to be deposited; and (iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent, characterised in that: (iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and (v) the non-aqueous solvent is a halocarbon non-aqueous solvent.

Abstract translation: 一种用于半导体材料的电化学沉积的方法，该方法包括：（i）提供非水溶剂; （ii）提供至少一种在待沉积的半导体材料内形成组成元素源的前体盐; 以及（iii）使用所述前体盐在所述非水溶剂中将所述半导体材料电沉积到电极基板上，其特征在于：（iv）所述半导体材料是含有至少一个的p块或后过渡金属半导体材料 p-块元素或过渡后金属; 和（v）非水溶剂是卤代烃非水溶剂。