Invention Application
US20150340245A1 HIGH-TEMPERATURE ISOTROPIC PLASMA ETCHING PROCESS TO PREVENT ELECTRICAL SHORTS
有权
高温等离子体等离子体蚀刻工艺，防止电气短路
- Patent Title: HIGH-TEMPERATURE ISOTROPIC PLASMA ETCHING PROCESS TO PREVENT ELECTRICAL SHORTS
- Patent Title (中): 高温等离子体等离子体蚀刻工艺，防止电气短路
-
Application No.: US14533999Application Date: 2014-11-05
-
Publication No.: US20150340245A1Publication Date: 2015-11-26
- Inventor: Neng Jiang , Joel Soman , Thomas Warren Lassiter , Mary Alyssa Drummond Roby , Nayeemuddin Mohammed , YungShan Chang
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L21/3213
- IPC: H01L21/3213
Abstract:
A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.
Public/Granted literature
- US09405089B2 High-temperature isotropic plasma etching process to prevent electrical shorts Public/Granted day:2016-08-02
Information query
IPC分类:
