公开(公告)号：US20150378064A1

公开(公告)日：2015-12-31

申请号：US14553812

申请日：2014-11-25

Applicant: Texas Instruments Incorporated

Inventor： YungShan Chang ,  Ricky A. Jackson

IPC: G02B1/18 ,  B81B7/00 ,  G02B26/08

CPC classification number: B81B7/0029 ,  G02B1/14 ,  G02B26/0875

Abstract: A piezoelectric optical micro-electro-mechanical systems (POMEMS) device includes a glass layer having a bottom surface and a top surface. The device may also include an upper moisture barrier layer having a top surface and a bottom surface in which the bottom surface of the top moisture barrier layer is substantially coextensive with and interfaces with the top surface of the glass layer. A piezo stack may be attached above the upper moisture barrier layer. The device may also include a lower moisture barrier layer having a bottom surface and a top surface. The top surface of the lower moisture barrier layer is substantially coextensive with and interfaces with the bottom surface of the glass layer. A semiconductor substrate may be attached below the bottom moisture barrier layer.

Abstract translation: 压电光电微机电系统（POMEMS）装置包括具有底表面和顶表面的玻璃层。 该装置还可以包括具有顶表面和底表面的上部防潮层，其中顶部防潮层的底表面基本上与玻璃层的顶表面共同延伸并与其接合。 压电叠层可以附着在上部防潮层上。 该装置还可以包括具有底表面和顶表面的下部防潮层。 下部防潮层的上表面与玻璃层的底面基本上共同延伸并与其接触。 半导体衬底可以附着在底部阻湿层的下方。

公开(公告)号：US09755139B2

公开(公告)日：2017-09-05

申请号：US14738847

申请日：2015-06-13

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/22 ,  H01L41/332 ,  H01L41/187

CPC classification number: H01L41/332 ,  H01L41/1876 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

公开(公告)号：US20150340245A1

公开(公告)日：2015-11-26

申请号：US14533999

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  Nayeemuddin Mohammed ,  YungShan Chang

IPC: H01L21/3213

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.

Abstract translation: 一种方法包括将具有氮化钛层的器件放置在腔室中。 该装置还具有包括光致抗蚀剂材料和铝铜硬掩模的掩模。 该方法还包括使用腔室对掩模进行灰化处理。 该方法还包括在灰化处理之后，使用该腔室进行蚀刻工艺以蚀刻穿过氮化钛层的一部分。 执行蚀刻工艺包括在至少约200℃的温度下将含有四氟甲烷（CF 4）和氧气（O 2）的气体混合物流入室中。

公开(公告)号：US10829365B2

公开(公告)日：2020-11-10

申请号：US15802706

申请日：2017-11-03

Applicant: Texas Instruments Incorporated

Inventor： YungShan Chang ,  Ricky A. Jackson

IPC: B81B7/00 ,  G02B1/14 ,  G02B26/08

Abstract: A piezoelectric optical micro-electro-mechanical systems (POMEMS) device includes a glass layer having a first surface and an opposite second surface. The device may also include a first moisture barrier layer having a first surface and an opposite second surface in which the second surface of the first moisture barrier layer is substantially coextensive with and interfaces with the first surface of the glass layer. A piezo stack may be attached on the first side of the first moisture barrier layer. The device may also include a second moisture barrier layer having a first surface and an opposite second surface. The first surface of the second moisture barrier is substantially coextensive with and interfaces with the second surface of the glass layer. A semiconductor substrate may be attached on the second side of the second moisture barrier layer.

公开(公告)号：US10319899B2

公开(公告)日：2019-06-11

申请号：US15669309

申请日：2017-08-04

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/332 ,  H01L41/187 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

公开(公告)号：US20150378127A1

公开(公告)日：2015-12-31

申请号：US14533947

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： YungShan Chang ,  Ricky A. Jackson ,  Jeff W. Ritchison ,  Neng Jiang

IPC: G02B7/04 ,  G02B7/09 ,  B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00523 ,  B81B3/0021 ,  B81B3/0072 ,  B81B7/02 ,  B81C1/00349 ,  B81C2201/0174 ,  G02B13/14 ,  G02B26/06

Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.

Abstract translation: 一种装置包括形成透镜的透镜材料。 该装置还包括在透镜材料上的压电电容器，其中压电电容器被配置为响应于压电电容器两端的电压而改变透镜材料的形状，从而改变透镜的焦点。 该装置还包括在透镜材料的一部分上方以及压电电容器的至少一部分上的至少一个应力补偿环。 所述至少一个应力补偿环被配置为至少部分地减少由于在所述透镜材料上或所述透镜材料中的应力引起的所述透镜材料的弯曲。

公开(公告)号：US11148939B2

公开(公告)日：2021-10-19

申请号：US15890781

申请日：2018-02-07

Applicant: Texas Instruments Incorporated

Inventor： YungShan Chang ,  Ricky A. Jackson ,  Jeff W. Ritchison ,  Neng Jiang

IPC: G02B26/06 ,  G02B13/14 ,  B81C1/00 ,  B81B7/02 ,  B81B3/00

Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.

公开(公告)号：US20180179054A1

公开(公告)日：2018-06-28

申请号：US15890781

申请日：2018-02-07

Applicant: Texas Instruments Incorporated

Inventor： YungShan Chang ,  Ricky A. Jackson ,  Jeff W. Ritchison ,  Neng Jiang

IPC: B81C1/00 ,  G02B26/06 ,  B81B7/02 ,  G02B13/14 ,  B81B3/00

CPC classification number: B81C1/00523 ,  B81B3/0021 ,  B81B3/0072 ,  B81B7/02 ,  B81B2201/047 ,  B81C1/00349 ,  B81C2201/0174 ,  G02B13/14 ,  G02B26/06

Abstract: An apparatus includes a lens material forming a lens. The apparatus also includes a piezoelectric capacitor over the lens material, where the piezoelectric capacitor is configured to change a shape of the lens material in response to a voltage across the piezoelectric capacitor to thereby change a focus of the lens. The apparatus further includes at least one stress compensation ring over a portion of the lens material and over at least a portion of the piezoelectric capacitor. The at least one stress compensation ring is configured to at least partially reduce bending of the lens material caused by stress on or in the lens material.

公开(公告)号：US20180141804A1

公开(公告)日：2018-05-24

申请号：US15802706

申请日：2017-11-03

Applicant: Texas Instruments Incorporated

Inventor： YungShan Chang ,  Ricky A. Jackson

IPC: B81B7/00 ,  G02B1/14 ,  G02B26/08

CPC classification number: B81B7/0029 ,  G02B1/14 ,  G02B26/0875

Abstract: A piezoelectric optical micro-electro-mechanical systems (POMEMS) device includes a glass layer having a first surface and an opposite second surface. The device may also include a first moisture barrier layer having a first surface and an opposite second surface in which the second surface of the first moisture barrier layer is substantially coextensive with and interfaces with the first surface of the glass layer. A piezo stack may be attached on the first side of the first moisture barrier layer. The device may also include a second moisture barrier layer having a first surface and an opposite second surface. The first surface of the second moisture barrier is substantially coextensive with and interfaces with the second surface of the glass layer. A semiconductor substrate may be attached on the second side of the second moisture barrier layer.

公开(公告)号：US09939710B2

公开(公告)日：2018-04-10

申请号：US15191569

申请日：2016-06-24

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  Nayeemuddin Mohammed ,  YungShan Chang

IPC: G02F1/29 ,  H01L21/3213 ,  G02B7/09 ,  H04N5/232 ,  C23F1/00 ,  C23F4/00 ,  H04N5/225 ,  G03B13/36 ,  H01L41/31 ,  H01L41/332

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.