Invention Application
US20150372456A1 HIGH POWER BLUE-VIOLET III-NITRIDE SEMIPOLAR LASER DIODES
有权
高功率蓝色紫外线III-NITRIDE二极管激光二极管
- Patent Title: HIGH POWER BLUE-VIOLET III-NITRIDE SEMIPOLAR LASER DIODES
- Patent Title (中): 高功率蓝色紫外线III-NITRIDE二极管激光二极管
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Application No.: US14766924Application Date: 2014-02-13
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Publication No.: US20150372456A1Publication Date: 2015-12-24
- Inventor: Arash Pourhashemi , Robert M. Farrell , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- Applicant: Arash POURHASHEMI , Robert M. FARRELL , Steven P. DENBAARS , James S. SPECK , Shuji NAKAMURA , THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- International Application: PCT/US14/16275 WO 20140213
- Main IPC: H01S5/343
- IPC: H01S5/343 ; H01S5/02 ; H01S5/40 ; H01S5/32 ; H01S5/30
Abstract:
A high power blue-violet Ill-nitride semi-polar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.
Public/Granted literature
- US09356431B2 High power blue-violet III-nitride semipolar laser diodes Public/Granted day:2016-05-31
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