Technology for programming a page of memory in a NAND memory device is disclosed and described. In an example, a method may include applying initial programming pulses for lower page programming of the page and pre-reading data of the lower page. The method may further include determining whether to apply an error recovery operation to the data of the lower page. Data indicative of secondary programming pulses to be used for programming upper page data are stored and the upper page data is programmed based on the secondary programming pulses and the data of the lower page.