An optoelectronic device and a method for fabricating the optoelectronic device are disclosed. The optoelectronic device comprises a p-n structure, a patterned dielectric layer comprising a dielectric material and a metal layer disposed on the dielectric layer. The metal layer makes one or more contact to the p-n structure through the patterned dielectric layer. The dielectric material may be chemically resistant to acids and may provide adhesion to the p-n structure and the metal layer. The method for fabricating an optoelectronic device comprises providing a p-n structure, providing a dielectric layer on the p-n structure and providing a metal layer on the dielectric layer and then lifting the device off the substrate, such that after the lift off the p-n structure is closer than the patterned dielectric layer to a front side of the device; wherein the device comprises the p-n structure, the patterned dielectric layer, and the metal layer.