发明申请
US20150380581A1 PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH CRYSTALLINE SILICON
审中-公开
太阳能电池的光接收表面与晶体硅的钝化
- 专利标题: PASSIVATION OF LIGHT-RECEIVING SURFACES OF SOLAR CELLS WITH CRYSTALLINE SILICON
- 专利标题(中): 太阳能电池的光接收表面与晶体硅的钝化
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申请号: US14317672申请日: 2014-06-27
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公开(公告)号: US20150380581A1公开(公告)日: 2015-12-31
- 发明人: Michael C. Johnson , Kieran Mark Tracy , Princess Carmi Tomada , David D. Smith , Seung Bum Rim , Périne Jaffrennou
- 申请人: Michael C. Johnson , Kieran Mark Tracy , Princess Carmi Tomada , David D. Smith , Seung Bum Rim , Périne Jaffrennou
- 主分类号: H01L31/0368
- IPC分类号: H01L31/0368 ; H01L31/028 ; H01L31/18 ; H01L31/077 ; H01L31/0236 ; H01L31/0216 ; H01L31/0376
摘要:
Methods of passivating light-receiving surfaces of solar cells with crystalline silicon, and the resulting solar cells, are described. In an example, a solar cell includes a silicon substrate having a light-receiving surface. An intrinsic silicon layer is disposed above the light-receiving surface of the silicon substrate. An N-type silicon layer is disposed on the intrinsic silicon layer. One or both of the intrinsic silicon layer and the N-type silicon layer is a micro- or poly-crystalline silicon layer. In another example, a solar cell includes a silicon substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the silicon substrate. An N-type micro- or poly-crystalline silicon layer disposed on the passivating dielectric layer.
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