Invention Application
- Patent Title: System And Method To Inhibit Erasing Of Portion Of Sector Of Split Gate Flash Memory Cells
- Patent Title (中): 抑制分裂门闪存单元部分擦除的系统和方法
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Application No.: US14486687Application Date: 2014-09-15
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Publication No.: US20160027517A1Publication Date: 2016-01-28
- Inventor: Jinho Kim , Nhan Do , Yuri Tkachev , Kai Man Yue , Xiaozhou Qian , Ning Bai
- Applicant: Silicon Storage Technology, Inc.
- Priority: CN201410447574.3 20140722
- Main IPC: G11C16/14
- IPC: G11C16/14
Abstract:
A system and method to inhibit the erasing of a portion of a sector of split gate flash memory cells while allowing the remainder of the sector to be erased is disclosed. The inhibiting is controlled by control logic that applies one or more bias voltages to the portion of the sector whose erasure is to be inhibited.
Public/Granted literature
- US09633735B2 System and method to inhibit erasing of portion of sector of split gate flash memory cells Public/Granted day:2017-04-25
Information query
