发明申请
US20160035855A1 Organic-Inorganic Hybrid Multilayer Gate Dielectrics for Thin-Film Transistors
有权
用于薄膜晶体管的有机 - 无机混合多层栅极电介质
- 专利标题: Organic-Inorganic Hybrid Multilayer Gate Dielectrics for Thin-Film Transistors
- 专利标题(中): 用于薄膜晶体管的有机 - 无机混合多层栅极电介质
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申请号: US13111699申请日: 2011-05-19
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公开(公告)号: US20160035855A1公开(公告)日: 2016-02-04
- 发明人: Tobin J. Marks , Young-geun Ha , Antonio Facchetti
- 申请人: Tobin J. Marks , Young-geun Ha , Antonio Facchetti
- 主分类号: H01L29/51
- IPC分类号: H01L29/51 ; H01L51/05 ; H01L29/786
摘要:
Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories.