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1.发明申请公开(公告)号：US20110284849A1
公开(公告)日：2011-11-24
申请号：US13111545
申请日：2011-05-19
申请人： Tobin J. Marks , Young-geun Ha , Antonio Facchetti
发明人： Tobin J. Marks , Young-geun Ha , Antonio Facchetti
IPC分类号： H01L29/786 , H01L29/04 , B82Y99/00
CPC分类号： H01L29/7869 , B82Y40/00 , H01L21/02159 , H01L21/02282 , H01L27/1292 , H01L29/4908 , H01L51/0537
摘要： Disclosed are thin film transistor devices incorporating a crosslinked inorganic-organic hybrid blend material as the gate dielectric. The blend material, obtained by thermally curing a mixture of an inorganic oxide precursor sol and an organosilane crosslinker at relatively low temperatures, can afford a high gate capacitance, a low leakage current density, and a smooth surface, and can be used to enable satisfactory transistor device performance at low operating voltages.
摘要翻译： 公开了掺入交联的无机 - 有机混合共混材料作为栅极电介质的薄膜晶体管器件。 通过在较低温度下热固化无机氧化物前体溶胶和有机硅烷交联剂的混合物获得的共混材料可以提供高栅极电容，低漏电流密度和光滑表面，并且可以用于令人满意 晶体管器件在低工作电压下的性能。
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2.发明申请Organic-Inorganic Hybrid Multilayer Gate Dielectrics for Thin-Film Transistors 有权用于薄膜晶体管的有机 - 无机混合多层栅极电介质公开(公告)号：US20160035855A1
公开(公告)日：2016-02-04
申请号：US13111699
申请日：2011-05-19
申请人： Tobin J. Marks , Young-geun Ha , Antonio Facchetti
发明人： Tobin J. Marks , Young-geun Ha , Antonio Facchetti
IPC分类号： H01L29/51 , H01L51/05 , H01L29/786
CPC分类号： H01L51/0533 , H01L21/441 , H01L29/24 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/66969 , H01L51/0053 , H01L51/0055 , H01L51/0529 , H01L51/0537 , H01L51/0545 , H01L2251/301
摘要： Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories.
摘要翻译： 公开了可用作电绝缘（或电介质）材料的有机 - 无机混合自组装多层膜。 这些多层通常包括无机底漆层和沉积在其上的一个或多个双层。 每个双层包括发色团或“＆pgr可极化”层和由氧化锆组成的无机覆盖层。 由于双层结构的规则性和由自组装过程产生的发色团的排列取向，所以本发明的多层膜可用于诸如薄膜晶体管的电子器件，以及非线性光学和非易失性存储器中。
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3.发明授权Crosslinked hybrid gate dielectric materials and electronic devices incorporating same 有权交联混合栅极电介质材料和结合其的电子器件公开(公告)号：US08471253B2
公开(公告)日：2013-06-25
申请号：US13111545
申请日：2011-05-19
申请人： Tobin J. Marks , Young-geun Ha , Antonio Facchetti
发明人： Tobin J. Marks , Young-geun Ha , Antonio Facchetti
CPC分类号： H01L29/7869 , B82Y40/00 , H01L21/02159 , H01L21/02282 , H01L27/1292 , H01L29/4908 , H01L51/0537
摘要： Disclosed are thin film transistor devices incorporating a crosslinked inorganic-organic hybrid blend material as the gate dielectric. The blend material, obtained by thermally curing a mixture of an inorganic oxide precursor sol and an organosilane crosslinker at relatively low temperatures, can afford a high gate capacitance, a low leakage current density, and a smooth surface, and can be used to enable satisfactory transistor device performance at low operating voltages.
摘要翻译： 公开了掺入交联的无机 - 有机混合共混材料作为栅极电介质的薄膜晶体管器件。 通过在较低温度下热固化无机氧化物前体溶胶和有机硅烷交联剂的混合物获得的共混材料可以提供高栅极电容，低漏电流密度和光滑表面，并且可以用于令人满意 晶体管器件在低工作电压下的性能。
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4.发明授权Organic-inorganic hybrid multilayer gate dielectrics for thin-film transistors 有权用于薄膜晶体管的有机 - 无机混合多层栅极电介质公开(公告)号：US09276226B2
公开(公告)日：2016-03-01
申请号：US13111699
申请日：2011-05-19
申请人： Tobin J. Marks , Young-geun Ha , Antonio Facchetti
发明人： Tobin J. Marks , Young-geun Ha , Antonio Facchetti
IPC分类号： H01L51/05
CPC分类号： H01L51/0533 , H01L21/441 , H01L29/24 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/66969 , H01L51/0053 , H01L51/0055 , H01L51/0529 , H01L51/0537 , H01L51/0545 , H01L2251/301
摘要： Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories.
摘要翻译： 公开了可用作电绝缘（或电介质）材料的有机 - 无机混合自组装多层膜。 这些多层通常包括无机底漆层和沉积在其上的一个或多个双层。 每个双层包括发色团或“＆pgr可极化”层和由氧化锆组成的无机覆盖层。 由于双层结构的规则性和由自组装过程产生的发色团的排列取向，所以本发明的多层膜可用于诸如薄膜晶体管的电子器件，以及非线性光学和非易失性存储器中。
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5.发明授权Siloxane-polymer dielectric compositions and related organic field-effect transistors 有权硅氧烷 - 聚合物电介质组合物和相关的有机场效应晶体管公开(公告)号：US08093588B2
公开(公告)日：2012-01-10
申请号：US12562800
申请日：2009-09-18
申请人： Tobin J. Marks , Antonio Facchetti , Myung-Han Yoon , He Yan
发明人： Tobin J. Marks , Antonio Facchetti , Myung-Han Yoon , He Yan
CPC分类号： H01L51/052 , H01L51/0036 , H01L51/0052 , H01L51/0068 , H01L51/0078
摘要： Dielectric compositions comprising siloxane and polymeric components, as can be used in a range of transistor and related device configurations.
摘要翻译： 包含硅氧烷和聚合物组分的介电组合物，可用于晶体管和相关器件配置的范围。
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公开(公告)号：US07982039B2
公开(公告)日：2011-07-19
申请号：US12648484
申请日：2009-12-29
申请人： Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Michael J. Ahrens , Brooks A. Jones , Myung-Han Yoon
发明人： Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Michael J. Ahrens , Brooks A. Jones , Myung-Han Yoon
IPC分类号： C07D221/22 , H01L21/36
CPC分类号： H01L51/0053 , C07D221/14 , C07D221/18 , C07D471/06 , C09B5/62 , C09B57/08 , H01L51/0545 , Y02E10/549
摘要： Mono- and diimide perylene and naphthalene compounds, N- and/or core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.
摘要翻译： 用于制造各种器件结构的单和二酰亚胺苝和萘化合物，N-和/或用吸电子基团取代的核心。
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7.发明授权Acene-based organic semiconductor materials and methods of preparing and using the same 有权基于乙烯的有机半导体材料及其制备和使用方法公开(公告)号：US07892454B2
公开(公告)日：2011-02-22
申请号：US11986017
申请日：2007-11-19
CPC分类号： H01L51/0053 , C09B5/62 , H01L51/0545 , H01L51/424 , H01L51/5012 , Y02E10/549 , Y02P70/521
摘要： Acene-based compounds that can be used to prepare n-type semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including n-type semiconductor materials prepared from these compounds also are provided.
摘要翻译： 可用于制备n型半导体材料的基于乙烯的化合物具有制备它们的方法。 还提供了包括由这些化合物制备的n型半导体材料的复合材料和电子器件。
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公开(公告)号：US20100204475A1
公开(公告)日：2010-08-12
申请号：US12648484
申请日：2009-12-29
申请人： Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Michael J. Ahrens , Brooks A. Jones , Myung-Han Yoon
发明人： Tobin J. Marks , Michael R. Wasielewski , Antonio Facchetti , Michael J. Ahrens , Brooks A. Jones , Myung-Han Yoon
IPC分类号： C07D471/22
CPC分类号： H01L51/0053 , C07D221/14 , C07D221/18 , C07D471/06 , C09B5/62 , C09B57/08 , H01L51/0545 , Y02E10/549
摘要： Mono- and diimide perylene and naphthalene compounds, N- and/or core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.
摘要翻译： 用于制造各种器件结构的单和二酰亚胺苝和萘化合物，N-和/或用吸电子基团取代的核心。
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9.发明授权Naphthalene-based semiconductor materials and methods of preparing and use thereof 有权基于萘的半导体材料及其制备和使用方法公开(公告)号：US07569693B2
公开(公告)日：2009-08-04
申请号：US11811902
申请日：2007-06-12
IPC分类号： C07D471/02 , H01L21/20
CPC分类号： C07D471/06 , C09B57/08 , H01L51/0053 , H01L51/0558
摘要： Provided are mono- and diimide naphthalene compounds for use in the fabrication of various device structures. In some embodiments, the naphthalene core of these compounds are mono-, di-, or tetra-substituted with cyano group(s) or other electron-withdrawing substituents or moieties. Such mono- and diimide naphthalene compounds also can be optionally N-substituted.
摘要翻译： 提供用于制造各种器件结构的单和二酰亚胺萘化合物。 在一些实施方案中，这些化合物的萘核心被氰基或其它吸电子取代基或部分单，二或四取代。 这样的单和二酰亚胺萘化合物也可任选地被N-取代。
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10.发明申请Diimide-based semiconductor materials and methods of preparing and using the same 有权基于二酰亚胺的半导体材料及其制备和使用方法公开(公告)号：US20080185577A1
公开(公告)日：2008-08-07
申请号：US11986019
申请日：2007-11-19
申请人： Antonio Facchetti , Tobin J. Marks , He Yan
发明人： Antonio Facchetti , Tobin J. Marks , He Yan
CPC分类号： C07D471/06 , C07D487/06 , C09B5/62 , C09B57/08 , H01L51/0053 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： Diimide-based semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the diimide-based semiconductor materials also are provided.
摘要翻译： 二酰亚胺类半导体材料具有制备该半导体材料的方法。 还提供了包括二酰亚胺类半导体材料的复合材料和电子器件。
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