Invention Application
- Patent Title: SELF-COMPENSATION OF STRAY FIELD OF PERPENDICULAR MAGNETIC ELEMENTS
- Patent Title (中): 自动补偿弹性磁场元素
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Application No.: US14454509Application Date: 2014-08-07
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Publication No.: US20160043304A1Publication Date: 2016-02-11
- Inventor: Wei-Chuan CHEN , Xiaochun ZHU , Xia LI , Yu LU , Chando PARK , Seung Hyuk KANG
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L43/02
Abstract:
A perpendicular magnetic tunnel junction (pMTJ) device includes a perpendicular reference layer, a tunnel barrier layer on a surface of the perpendicular reference layer, and a perpendicular free layer on a surface of the tunnel barrier layer. The pMTJ device also includes a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer. The pMTJ device further includes a high permeability material on the dielectric passivation layer that is configured to be magnetized by the perpendicular reference layer and to provide a stray field to the perpendicular free layer that compensates for a stray field from the perpendicular reference layer.
Public/Granted literature
- US10043967B2 Self-compensation of stray field of perpendicular magnetic elements Public/Granted day:2018-08-07
Information query
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