Invention Application
US20160048447A1 MAGNETORESISTIVE RANDOM-ACCESS MEMORY CACHE WRITE MANAGEMENT 审中-公开
磁性随机存取存储器高速缓存写入管理

  • Patent Title: MAGNETORESISTIVE RANDOM-ACCESS MEMORY CACHE WRITE MANAGEMENT
  • Patent Title (中): 磁性随机存取存储器高速缓存写入管理
  • Application No.: US14442093
    Application Date: 2014-03-28
  • Publication No.: US20160048447A1
    Publication Date: 2016-02-18
  • Inventor: Yan Solihin
  • Applicant: Empire Technology Development LLC
  • International Application: PCT/US14/32215 WO 20140328
  • Main IPC: G06F12/02
  • IPC: G06F12/02 G06F12/08 G06F12/12
MAGNETORESISTIVE RANDOM-ACCESS MEMORY CACHE WRITE MANAGEMENT
Abstract:
Technologies are generally described manage MRAM cache writes in processors. In some examples, when a write request is received with data to be stored in an MRAM cache, the data may be evaluated to determine whether the data is to be further processed. In response to a determination that the data is to be further processed, the data may be stored in a write cache associated with the MRAM cache. In response to a determination that the data is not to be further processed, the data may be stored in the MRAM cache.
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