Invention Application
- Patent Title: Recessed Salicide Structure to Integrate a Flash Memory Device with a High K, Metal Gate Logic Device
- Patent Title (中): 嵌入式自杀式结构将闪存设备与高K金属门逻辑器件集成
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Application No.: US14481987Application Date: 2014-09-10
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Publication No.: US20160056250A1Publication Date: 2016-02-25
- Inventor: Harry Hak-Lay Chuang , Wei Cheng Wu , Shih-Chang Liu , Ya-Chen Kao
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/66 ; H01L29/792 ; H01L27/115 ; H01L27/105
Abstract:
Some embodiments of the present disclosure provide an integrated circuit (IC) for an embedded flash memory device. The IC includes a flash memory cell having a memory cell gate. A silicide contact pad is arranged in a recess of the memory cell gate. A top surface of the silicide contact pad is recessed relative to a top surface of the memory cell gate. Dielectric side-wall spacers extend along sidewalls of the recess from the top surface of the memory cell gate to the top surface of the silicide contact pad.
Public/Granted literature
- US09735245B2 Recessed salicide structure to integrate a flash memory device with a high κ, metal gate logic device Public/Granted day:2017-08-15
Information query
IPC分类:
