ETCHING METHOD

Invention Application

US20160064245A1 ETCHING METHOD 有权

Title translation: 蚀刻方法

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Patent Title: ETCHING METHOD
Patent Title (中): 蚀刻方法
Application No.: US14826569

Application Date: 2015-08-14
Publication No.: US20160064245A1

Publication Date: 2016-03-03
Inventor: Yusuke SAITOH , Yu NAGATOMO , Hayato HISHINUMA , Wataru TAKAYAMA , Sho TOMINAGA , Yuki KANEKO
Applicant: TOKYO ELECTRON LIMITED
Applicant Address: JP Tokyo
Assignee: TOKYO ELECTRON LIMITED
Current Assignee: TOKYO ELECTRON LIMITED
Current Assignee Address: JP Tokyo
Priority: JP2014-175047 20140829
Main IPC: H01L21/311
IPC: H01L21/311

Abstract:

Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated.

Abstract(Chinese):

公开了一种用于蚀刻包括交替提供氧化硅膜和氮化硅膜形成的多层膜的第一区域的方法和具有单个氧化硅膜的第二区域。蚀刻方法包括：提供处理对象物体，其包括设置在等离子体处理装置的处理容器内的第一区域和第二区域上的掩模; 在处理容器内产生包含氢氟烃气体的第一处理气体的等离子体，所述等离子体容纳所述处理目标物体; 以及在处理容器内产生包含碳氟化合物气体的第二处理气体的等离子体，其容纳处理对象物体。交替地重复产生第一处理气体的等离子体的步骤和产生第二处理气体的等离子体的步骤。

Public/Granted literature

US09779961B2 Etching method Public/Granted day:2017-10-03

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀