公开(公告)号：US20170372916A1

公开(公告)日：2017-12-28

申请号：US15625165

申请日：2017-06-16

Applicant: Tokyo Electron Limited

Inventor： Jin KUDO ,  Wataru TAKAYAMA ,  Maju TOMURA

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to −35° C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.

公开(公告)号：US20170162399A1

公开(公告)日：2017-06-08

申请号：US15361675

申请日：2016-11-28

Applicant: Tokyo Electron Limited

Inventor： Wataru TAKAYAMA ,  Sho TOMINAGA ,  Yoshiki IGARASHI

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L27/11556 ,  H01L27/11582 ,  H01L28/00

Abstract: There is provided a plasma etching method. The plasma etching method includes generating plasma, by using a first high frequency power output from a first high frequency power supply, from a first processing gas that contains fluorine-containing gas, thereby etching a laminated film of a silicon oxide film and a silicon nitride film through the generated plasma, and generating plasma, by using the first high frequency power, from a second processing gas that contains bromine-containing gas, thereby etching the laminated film through the generated plasma.

公开(公告)号：US20190304824A1

公开(公告)日：2019-10-03

申请号：US16369707

申请日：2019-03-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki SUZUKI ,  Wataru TAKAYAMA ,  Takahiro MURAKAMI ,  Kimihiro FUKASAWA ,  Shinichiro HAYASAKA

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/311 ,  H01L21/687 ,  H01J37/20 ,  H01J37/32

Abstract: A plasma processing apparatus includes a placing table having a placing surface on which a workpiece is placed to be subjected to a plasma processing; an elevator configured to raise and lower the workpiece with respect to the placing surface of the placing table; and an elevator controller configured to control the elevator, during a period until a transfer of the workpiece begins after a completion of the plasma processing on the workpiece, to hold the workpiece at a position where the placing surface of the placing table and the workpiece are spaced apart from each other by a distance that prevents an intrusion of a reaction product, and control the elevator, when the transfer of the workpiece begins, to raise the workpiece from the position where the workpiece is held.

公开(公告)号：US20160064245A1

公开(公告)日：2016-03-03

申请号：US14826569

申请日：2015-08-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke SAITOH ,  Yu NAGATOMO ,  Hayato HISHINUMA ,  Wataru TAKAYAMA ,  Sho TOMINAGA ,  Yuki KANEKO

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J2237/334 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/31144

Abstract: Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated.

Abstract translation: 公开了一种用于蚀刻包括交替提供氧化硅膜和氮化硅膜形成的多层膜的第一区域的方法和具有单个氧化硅膜的第二区域。 蚀刻方法包括：提供处理对象物体，其包括设置在等离子体处理装置的处理容器内的第一区域和第二区域上的掩模; 在处理容器内产生包含氢氟烃气体的第一处理气体的等离子体，所述等离子体容纳所述处理目标物体; 以及在处理容器内产生包含碳氟化合物气体的第二处理气体的等离子体，其容纳处理对象物体。 交替地重复产生第一处理气体的等离子体的步骤和产生第二处理气体的等离子体的步骤。

公开(公告)号：US20180226264A1

公开(公告)日：2018-08-09

申请号：US15949185

申请日：2018-04-10

Applicant: Tokyo Electron Limited

Inventor： Wataru TAKAYAMA ,  Sho TOMINAGA ,  Yoshiki IGARASHI

IPC: H01L21/311 ,  H01L27/11582 ,  H01L27/11556

Abstract: A plasma etching method includes a first process of generating a first plasma from a first processing gas that contains fluorine-containing gas and hydrogen-containing gas, by using a first radio frequency power, to etch a laminated film including a first silicon-containing film layer and a second silicon-containing film layer that is different from the first silicon-containing film layer, with the generated first plasma; and a second process that is performed after the first process and includes generating a second plasma from a second processing gas that contains bromine-containing gas, by using a second radio frequency power, to etch the laminated film with the generated second plasma. Unevenness is formed at an interface between the first silicon-containing film layer and the second silicon-containing film layer in the first process, and the unevenness is removed in the second process.

公开(公告)号：US20160314986A1

公开(公告)日：2016-10-27

申请号：US15131221

申请日：2016-04-18

Applicant: Tokyo Electron Limited

Inventor： Sho TOMINAGA ,  Wataru TAKAYAMA ,  Yoshiki IGARASHI

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: An etching method includes generating a plasma from a hydrogen-containing gas and a fluorine-containing gas with high-frequency electric power for plasma generation. A first film including a silicon oxide film and a silicon nitride film is etched with the generated plasma in an environment at a temperature lower than or equal to −30° C. The first etch rate of first etching that etches the first film and the second etch rate of second etching that etches a second film having a structure different from the structure of the first film are controlled, so that the difference between the first etch rate and the second etch rate is within ±20% of the first etch rate.

Abstract translation: 蚀刻方法包括从具有用于等离子体产生的高频电力的含氢气体和含氟气体产生等离子体。 在低于或等于-30℃的环境中，用产生的等离子体蚀刻包括氧化硅膜和氮化硅膜的第一膜。蚀刻第一膜和第二膜的第一蚀刻的第一蚀刻速率 控制蚀刻具有与第一膜的结构不同的结构的第二膜的第二蚀刻的蚀刻速率，使得第一蚀刻速率和第二蚀刻速率之间的差在第一蚀刻速率的±20％以内。

公开(公告)号：US20150179466A1

公开(公告)日：2015-06-25

申请号：US14574565

申请日：2014-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Wataru TAKAYAMA ,  Shoichiro MATSUYAMA ,  Susumu NOGAMI ,  Daisuke TAMURA ,  Kyosuke HAYASHI ,  Jun KAWANOBE

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01L21/31144 ,  H01L21/32137 ,  H01L27/11582

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括提供一种待处理对象，其包括通过在等离子体处理装置的处理容器内交替层叠具有不同介电系数的第一膜和第二膜而形成的多层膜; 并且重复地执行包括：向所述处理容器供应包括O 2气体或N 2气体的第一气体和稀有气体，并且激发所述第一气体，将包括碳氟化合物气体或氟代烃气体的第二气体供应到所述处理容器中并激发 第二气体，并且将包括HBr气体，含氟气体，氟碳化合物气体或氟代烃气体的第三气体供给到处理容器中并激发第三气体，从而通过掩模蚀刻多层膜。